CJPF04N80 PDF даташит
Спецификация CJPF04N80 изготовлена «JCET» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
Номер произв | CJPF04N80 |
Описание | N-Channel MOSFET |
Производители | JCET |
логотип |
4 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF04N80
V(BR)DSS
800V
N-Channel Power MOSFET
RDS(on)MAX
3.0Ω@10V
ID
4A
TO-220F
GENERAL DESCRIPTION
This is a N-channel mode power MOSFET using advanced
technology to provide planar stripe and DMOS technology. This
technology is specialized in allowing a minimum on-state resistance,
and superior switching performance. It also can withstand high energy
pulse in the avalanche and commutation mode. It is universally
applied in high efficiency switch mode power supply.
FEATURE
z High Current Rating
z Lower RDS(on)
z Lower Capacitance
z Lower Total Gate Charge
z Avalanche Energy Specified
z High Switching Speed
1. GATE
2. DRAIN
3. SOURCE
MARKING
EQUIVALENT CIRCUIT
123
CJPF04N80
XXX
CJPF04N80= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes ,
1/8”from case for 5 seconds
Symbol
VDS
VGS
ID
IDM
EAS
RθJA
TJ
TSTG
TL
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1
Value
800
±30
4.0
16
170
62.5
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
B,May,2016
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MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min Typ Max Unit
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current (note2)
V(BR)DSS
IDSS
IGSS
VGS = 0V, ID =250µA
VDS =800V, VGS =0V
VDS =0V, VGS =±30V
800 V
10 µA
±100 nA
On characteristics (note2)
Gate-threshold voltage
Static drain-source on-resistance
VGS(th)
RDS(on)
VDS =VGS, ID =250µA
VGS =10V, ID =2.0A
34
5V
2.1 3.0
Ω
Dynamic characteristics (note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =25V,VGS =0V,f =1MHz
880
100 pF
12
Switching characteristics (note 2,3)
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =640V,VGS =10V,ID =4.0A
VDD=400V, VGS=10V,
RG=25Ω, ID =4.0A
25
4.2 nC
9.1
40
100
ns
80
80
Sourceource-drain diode characteristics
Maximum diode forward continuous current
Maximum diode forward pulse current
Diode forward voltage
IS
ISM
VSD IS=4A,VGS=0V
4A
16 A
1.4 V
Notes :
1. L=20mH, IL=4 A, VDD=50V, VGS=10V,RG=25Ω,Starting TJ=25℃.
2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
3. These parameters have no way to verify.
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2
B,May,2016
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Typical Characteristics
Output Characteristics
6
Pulsed
5 VGS= 6.5V、 7V、8, 10V
4
3 VGS=6V
2
1 VGS=5.5V
0
0 6 12 18 24
DRAIN TO SOURCE VOLTAGE VDS (V)
4
Ta=25℃
Pulsed
3
R
DS(ON)
——
I
D
30
2
VGS=10V
1
0
0.1 1 2 3 4
DRAIN CURRENT ID (A)
6
Pulsed
I
S
——
V
SD
5
1
Ta=100℃
Ta=25℃
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
SOURCE TO DRAIN VOLTAGE VSD (V)
1.4
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3
1.0
VDS=10V
Pulsed
0.5
Transfer Characteristics
Ta=100℃
Ta=25℃
0.0
01234567
GATE TO SOURCE VOLTAGE VGS (V)
R
DS(ON)
——
V
GS
12
Pulsed
ID=2A
10
8
Ta=100℃
Ta=25℃
6
4
2
0
4 6 8 10
GATE TO SOURCE VOLTAGE VGS (V)
12
Threshold Voltage
5.0
4.5
ID=250uA
4.0
3.5
3.0
25
50 75 100
JUNCTION TEMPERATURE TJ (℃)
125
B,May,2016
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