CJPF05N60 PDF даташит
Спецификация CJPF05N60 изготовлена «JCET» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
Номер произв | CJPF05N60 |
Описание | N-Channel MOSFET |
Производители | JCET |
логотип |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF05N60 N-Channel Power MOSFET
V(BR)DSS
RDS(on)MAX
ID
600V
2.5Ω@10V
4.5A
Description
This advanced high voltage MOSFET is designed to withstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode with fast
recovery time.
Designed for high voltage, high speed switching applications
such as power suplies, converters, power motor controls and bridge
circuits.
TO-220F
1. GATE
2. DRAIN
3. SOURCE
123
FEATURES
z Low RDS(on)
z Lower Capacitances
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
MARKING
EQUIVALENT CIRCUIT
CJPF05N60
XXX
CJPF05N60= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Single Pulsed Avalanche Energy (note1)
Power Dissipation (note2,Ta=25℃)
Maximum Power Dissipation (note3,Tc=25℃)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
EAS
PD
RθJA
TJ
Tstg
Value
600
±30
4.5
250
2
120
62.5
150
-50 ~+150
Unit
V
A
mJ
W
℃/W
℃
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MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter
Gate-Body Leakage Current (note 4)
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Zero Gate Voltage Drain Current
Forward transconductance
Drain-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
IGSS
V(BR) DSS
VGS(th)
IDSS
gfs
RDS(on)
Ciss
Coss
Crss
Test Condition
VDS =0V, VGS =±30V
VGS = 0V, ID =250µA
VDS =VGS, ID =250µA
VDS =600V, VGS =0V
VDS =40V, ID =2.25A
VGS =10V, ID =2.25A
VDS =25V,VGS =0V,
f =1MHz
Turn-On Delay Time (note 4)
td(on)
Rise Time (note 4)
Turn-Off Delay Time (note 4)
Fall Time (note 4)
tr
td(off)
tf
VDD=300V,ID=4.5A,
RG=25Ω
Forward on Voltage (note 4)
VSD VGS =0V, IS=4.5A
Notes:
1. EAS condition: Tj=25℃ , VDD=50V,RG=25Ω,L=16mH,IAS=5A
2. This test is performed with no heat sink at Ta=25℃.
3. This test is performed with infinite heat sink at Tc=25℃.
4. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤2%.
Min Typ Max Unit
±100 nA
600
2.0 3.5 4.0
V
1 µA
2.9
1.8 2.5
670
S
Ω
72 pF
8.5
30
90
ns
85
100
1.4 V
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Typical Characteristics
10
Ta=25℃
Pulsed
8
6
Output Characteristics
VGS=20V,10V,5.5V
VGS=5.2V
4 VGS=5V
VGS=4.8V
2
VGS=4.5V
0
0 5 10 15 20 25 30
DRAIN TO SOURCE VOLTAGE VDS (V)
R
DS(ON)
——
I
D
4
Ta=25℃
Pulsed
3
VGS=10V
2
1
0
01234
DRAIN CURRENT ID (A)
10
Ta=25℃
Pulsed
I
S
——
V
SD
5
1
3.0
Ta=25℃
Pulsed
2.5
Transfer Characteristics
2.0
1.5
1.0
0.5
0.0
02468
GATE TO SOURCE VOLTAGE VGS (V)
10
R
DS(ON)
——
V
GS
15
Ta=25℃
Pulsed
12
9
6 ID=2.25A
3
0
0 2 4 6 8 10 12
GATE TO SOURCE VOLTAGE VGS (V)
0.1
0.01
0.0
0.3 0.6 0.9 1.2
SOURCE TO DRAIN VOLTAGE VSD (V)
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