CJPF08N60 PDF даташит
Спецификация CJPF08N60 изготовлена «JCET» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
Номер произв | CJPF08N60 |
Описание | N-Channel MOSFET |
Производители | JCET |
логотип |
4 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF08N60
V(BR)DSS
600V
N-Channel Power MOSFET
RDS(on)MAX
1.3Ω@10V
ID
8A
TO-220F
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits.
1. GATE
2. DRAIN
3. SOURCE
FEATURE
z High Current Rating
z Lower RDS(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
MARKING
EQUIVALENT CIRCUIT
123
CJPF08N60
XXX
CJPF08N60= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Power Dissipation
Thermal Resistance from Junction to Ambient
Operating and Storage Temperature Range
Maximum lead temperure for soldering purposes ,
Duration 5 seconds
Symbol
VDS
VGS
ID
IDM
EAS
PD
RθJA
TJ, TSTG
TL
www.cj-elec.com
1
Value
600
±30
8
32
250
2
62.5
-55 ~+150
260
Unit
V
A
mJ
W
℃/W
℃
C,May,2016
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MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
Drain-source diode forward voltage(note2)
Zero gate voltage drain current
Gate-body leakage curren (note2)
V(BR)DSS
VSD
IDSS
IGSS
VGS = 0V, ID =250µA
VGS = 0V, IS =7A
VDS =600V, VGS =0V
VDS =0V, VGS =±30V
On characteristics (note2)
Gate-threshold voltage
Static drain-source on-resistance
VGS(th)
RDS(on)
VDS =VGS, ID =250µA
VGS =10V, ID =4A
Dynamic characteristics (note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =25V,VGS =0V,f =1MHz
Switching characteristics (note 3)
Turn-on delay time (note3)
Turn-on rise time (note3)
Turn-off delay time (note3)
Turn-off fall time (note3)
td(on)
tr
td(off)
tf
VDD=300V, VGS=10V,
RG=25Ω, ID =7A
Notes :
1. L=7mH, IL=8A, VDD=50V, RG=25Ω,Starting TJ=25℃.
2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
3. These parameters have no way to verify.
Min Typ Max Unit
600
V
1.4
1 µA
±100 nA
2.0 3.0 4.0
1.0 1.3
V
Ω
1280
120
11
pF
80
165
ns
160
120
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2
C,May,2016
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Typical Characteristics
15
Pulsed
12
Output Characteristics
VGS= 6V、10V
9
VGS=5.5V
6 VGS=5V
3
VGS=4.5V
VGS=4.0V
0
0 5 10 15 20 25 30
DRAIN TO SOURCE VOLTAGE VDS (V)
2.0
Ta=25℃
Pulsed
1.6
R
DS(ON)
——
I
D
1.2 VGS=10V
0.8
0.4
0.0
1
2
46
DRAIN CURRENT ID (A)
8
10
Pulsed
I
S
——
V
SD
10
1
0.1 Ta=100℃
Ta=25℃
0.01
1E-3
0.0
0.2 0.4 0.6 0.8 1.0
SOURCE TO DRAIN VOLTAGE VSD (V)
1.2
5
VDS=10V
Pulsed
4
Transfer Characteristics
3
2 Ta=100℃
1 Ta=25℃
0
01234567
GATE TO SOURCE VOLTAGE VGS (V)
R
DS(ON)
——
V
GS
8
Pulsed
ID=4A
6
4
Ta=100℃
2
Ta=25℃
0
2 4 6 8 10 12
GATE TO SOURCE VOLTAGE VGS (V)
Threshold Voltage
5
4
ID=250uA
3
2
1
0
25 50 75 100 125
JUNCTION TEMPERATURE TJ (℃)
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3
C,May,2016
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