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CJPF12N60 PDF даташит

Спецификация CJPF12N60 изготовлена ​​​​«JCET» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв CJPF12N60
Описание N-Channel MOSFET
Производители JCET
логотип JCET логотип 

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CJPF12N60 Даташит, Описание, Даташиты
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220//72F Plastic-Encapsulate MOSFETS
72/72)
CJP12N60,CJPF12N60 600V N-Channel Power MOSFET
General Description
This advanced technology has been especially tailored to minimize
on-state resistance, provide superior switching performance, and withistand
high energy pulse in the avalanche and commutation mode. These devices
are well suited for high efficiency switch mode power supply.
FEATURE
z Low Crss
z Fast switching
z Improved dv/dt capability
D
!
"
!"
G!
"
"
!
S
Maximum ratings (Ta=25unless otherwise noted)
1. GATE
2. DRAIN
3. SOURCE
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Single Pulsed Avalanche Energy (note1)
Power Dissipation
Thermal Resistance from Junction to Ambient
Operating Temperature
Storage Temperature
Symbol
VDS
VGS
ID
EAS
PD
RθJA
TJ
TSTG
Value
600
±30
12
790
2
62.5
150
-55 ~+150
Unit
V
A
mJ
W
/W
www.cj-elec.com
A,Dec,2010
1 D,Oct,2014









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CJPF12N60 Даташит, Описание, Даташиты
Electrical characteristics (Ta=25unless otherwise noted)
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
Drain-source diode forward voltage(note2)
Zero gate voltage drain current
Gate-body leakage current, forward(note2)
Gate-body leakage current, reverse(note2)
VSD
IDSS
IGSSF
IGSSR
VGS = 0V, IS =12A
VDS =600V, VGS =0V
VDS =0V, VGS =30V
VDS =0V, VGS =-30V
On characteristics (note2)
Gate-threshold voltage
Static drain-source on-resistance
VGS(th)
RDS(on)
VDS =VGS, ID =250µA
VGS =10V, ID =6.0A
Dynamic characteristics (note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =25V,VGS =0V,f =1MHz
Switching characteristics(note3)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
td(on)
tr
td(off)
tf
VDD=325V, RG=4.7, ID =12A
Notes :
1. L=10mH, IAS=12 A, VDD=50V, RG=25,Starting TJ=25.
2. Pulse Test : Pulse width300µs, duty cycle 2%.
3. These parameters have no way to verify.
Min Typ Max Units
600
V
1.4
10 µA
100
-100
nA
2.0 4.0 V
0.8
1800
200
25
pF
30
90
ns
160
90
www.cj-elec.com
A,Dec,2010
2 D,Oct,2014









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CJPF12N60 Даташит, Описание, Даташиты
TO-220-3L Package Outline Dimensions
Symbol
A
A1
b
b1
c
c1
D
E
E1
e
e1
F
h
L
L1
Φ
Dimensions In Millimeters
Min Max
4.470
4.670
2.520
2.820
0.710
0.910
1.170
1.370
0.310
0.530
1.170
1.370
10.010
10.310
8.500
8.900
12.060
12.460
2.540 TYP
4.980
5.180
2.590
2.890
0.000
0.300
13.400
13.800
3.560
3.960
3.735
3.935
Dimensions In Inches
Min Max
0.176
0.184
0.099
0.111
0.028
0.036
0.046
0.054
0.012
0.021
0.046
0.054
0.394
0.406
0.335
0.350
0.475
0.491
0.100 TYP
0.196
0.204
0.102
0.114
0.000
0.012
0.528
0.543
0.140
0.156
0.147
0.155
www.cj-elec.com
3
D,Oct,2014










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