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PDF CJPF55P30 Data sheet ( Hoja de datos )
| Número de pieza | CJPF55P30 | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | JCET | |
| Logotipo |  |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF55P30
V(BR)DSS
-55V
P-Channel Power MOSFET
RDS(on)MAX
40mΩ@-10V
ID
-30A
TO-220F
DESCRIPTION
The CJPF55P30 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be used in a
wide variety of applications.
1. GATE
2. DRAIN
3. SOURCE
FEATURES
z High density cell design for ultra low RDS(ON)
z Fully characterized avalanche voltage and current
z Good stability and uniformity with high EAS
z Excellent package for good heat dissipation
APPLICATIONS
z Power switching application
z Hard switched and high frequency circuits
z Uninterruptible Power Supply(UPS)
MARKING
EQUIVALENT CIRCUIT
123
CJPF55P30
XXX
CJPF55P30= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).EAS condition: VDD=-25V,L=0.5mH, RG=25Ω, Starting TJ = 25°C
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD
RθJA
TJ
Tstg
TL
www.cj-elec.com
1
Limit
-55
±20
-30
-120
225
2
62.5
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
C,May,2016
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CJPF55P30.PDF ] | |
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