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10NM60N PDF даташит

Спецификация 10NM60N изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв 10NM60N
Описание Power MOSFET ( Transistor )
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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10NM60N Даташит, Описание, Даташиты
STD10NM60N, STF10NM60N,
STP10NM60N, STU10NM60N
N-channel 600 V, 0.53 typ., 10 A MDmesh™ II Power MOSFET
in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet - production data
7$%


DPAK
7$%



TO-220



TO-220FP
7$%
IPAK



Features
Order code
VDS @TJ
max.
STD10NM60N
STF10NM60N
STP10NM60N
STU10NM60N
650 V
RDS(on)
max.
0.55
ID PTOT
10 A
70 W
25 W
70 W
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Figure 1. Internal schematic diagram
Applications
' 7$%
Switching applications
Description
* 
6 
Order code
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
$0Y
Table 1. Device summary
Marking
Package
Packing
STD10NM60N
STF10NM60N
STP10NM60N
STU10NM60N
10NM60N
10NM60N
10NM60N
10NM60N
DPAK
TO-220FP
TO-220
IPAK
Tape and reel
Tube
Tube
Tube
December 2015
This is information on a product in full production.
DocID028726 Rev 1
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10NM60N Даташит, Описание, Даташиты
Contents
Contents
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
........................... 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1 STD10NM60N, DPAK (TO-252) package information . . . . . . . . . . . . . . . 10
4.2 STF10NM60N, TO-220FP package information . . . . . . . . . . . . . . . . . . . 17
4.3 STP10NM60N, TO-220 package information . . . . . . . . . . . . . . . . . . . . . . 19
4.4 STU10NM60N, IPAK (TO-251) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
5 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
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10NM60N Даташит, Описание, Даташиты
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220 TO-220FP IPAK DPAK
VGS
ID
ID
IDM(2)
PTOT
dv/dt(3)
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
10
5
32
70
± 25
10 (1)
5 (1)
32 (1)
25
15
VISO
TJ
Tstg
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t =1 s; TC = 25 °C)
Operating junction temperature
Storage temperature
2500
- 55 to 150
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD 10 A, di/dt 400 A/µs, VDS peak V(BR)DSS, VDD = 80% V(BR)DSS.
10
5
32
70
V
A
A
A
W
V/ns
V
°C
Symbol
Table 3. Thermal data
Parameter
Value
Unit
TO-220 TO-220FP IPAK DPAK
Rthj-case
Rthj-amb
Rthj-pcb
Thermal resistance junction-case max.
Thermal resistance junction-ambient max.
Thermal resistance junction-pcb max.
1.79 5
62.50
1.79
100
50
°C/W
°C/W
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max.)
Single pulse avalanche energy
EAS
(starting TJ = 25 °C, ID = IAS, VDD = 50 V)
4
200
Unit
A
mJ
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Номер в каталогеОписаниеПроизводители
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