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PDF NCE65R1K2D Data sheet ( Hoja de datos )
| Número de pieza | NCE65R1K2D | |
| Descripción | N-Channel Super Junction Power MOSFET | |
| Fabricantes | NCE Power | |
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NCE65R1K2,NCE65R1K2D,NCE65R1K2F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
VDS
RDS(ON) MAX
ID
650
1200
4
V
mΩ
A
Application
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE65R1K2
TO-220
NCE65R1K2
NCE65R1K2D
TO-263
NCE65R1K2D
NCE65R1K2F
TO-220F
NCE65R1K2F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V）
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
Repetitive Avalanche energy ，tAR limited by Tjmax
(Note 1)
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
IAR
EAR
NCE65R1K2
NCE65R1K2F
NCE65R1K2D
650
±30
4 4*
2.5 2.5
12 12
46 28.5
0.37 0.23
130
2
0.2
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com v1.0
1 page  
NCE65R1K2,NCE65R1K2D,NCE65R1K2F
Figure13. Transient Thermal Impedance for TO-220F
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
http://www.ncepower.com v1.0
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NCE65R1K2D.PDF ] | |
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