NCE65R900D PDF даташит
Спецификация NCE65R900D изготовлена «NCE Power» и имеет функцию, называемую «N-Channel Super Junction Power MOSFET». |
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Детали детали
Номер произв | NCE65R900D |
Описание | N-Channel Super Junction Power MOSFET |
Производители | NCE Power |
логотип |
10 Pages
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NCE65R900D,NCE65R900, NCE65R900F
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
VDS
RDS(ON)
ID
650
900
5
V
mΩ
A
Application
● Power factor correction(PFC)
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE65R900D
TO-263
NCE65R900D
NCE65R900
TO-220
NCE65R900
NCE65R900F
TO-220F
NCE65R900F
TO-263 TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V)
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Drain Source voltage slope, VDS = 480 V, ID =5 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
IAR
NCE65R900
NCE65R900F
NCE65R900D
650
±30
5 5*
3 3*
15 15*
48
49 29
0.39 0.23
135
2.5
Unit
V
V
A
A
A
V/ns
W
W/°C
mJ
A
Wuxi NCE Power Semiconductor Co., Ltd
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NCE65R900D,NCE65R900, NCE65R900F
Parameter
Repetitive Avalanche energy ,tAR limited by Tjmax
(Note 1)
Symbol
EAR
Value
0.4
Unit
mJ
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
Table 2. Thermal Characteristic
Parameter
Thermal Resistance,Junction-to-Case(Maximum)
Thermal Resistance,Junction-to-Ambient (Maximum)
TJ,TSTG
Symbol
RthJC
RthJA
-55...+150
°C
NCE65R900
NCE65R900D
2.55
62
NCE65R900F
4.3
80
Unit
°C /W
°C /W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
BVDSS
IDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VGS=0V ID=250μA
VDS=650V,VGS=0V
VDS=650V,VGS=0V
VGS=±30V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=3A
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Intrinsic gate resistance
gFS VDS = 20V, ID = 3A
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Qg
Qgs
Qgd
VDS=480V,ID=5A,
VGS=10V
RG f = 1 MHz open drain
Switching times
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
VDD=380V,ID=5A,
RG=18Ω,VGS=10V
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak reverse recovery current
ISD
ISDM
TC=25°C
VSD Tj=25°C,ISD=5A,VGS=0V
trr
Qrr Tj=25°C,IF=5A,di/dt=100A/μs
Irrm
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω
Min Typ
650
2.5 3
780
4.8
460
45
3.5
10
1.6
4
2.5
6
3
50
9
1
250
2.2
15
Max
1
50
±100
3.5
900
20
60
15
5
15
1.3
Unit
V
μA
μA
nA
V
mΩ
S
PF
PF
PF
nC
nC
nC
Ω
nS
nS
nS
nS
A
A
V
nS
uC
A
Wuxi NCE Power Semiconductor Co., Ltd
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NCE65R900D,NCE65R900, NCE65R900F
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area for TO-220,TO-263
Figure2. Safe operating area for TO-220F
Figure3. Source-Drain Diode Forward Voltage
Figure4. Output characteristics
Figure5. Transfer characteristics
Figure6. Static drain-source on resistance
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
http://www.ncepower.com
v1.0
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Номер в каталоге | Описание | Производители |
NCE65R900 | N-Channel Super Junction Power MOSFET | NCE Power |
NCE65R900D | N-Channel Super Junction Power MOSFET | NCE Power |
NCE65R900F | N-Channel Super Junction Power MOSFET | NCE Power |
NCE65R900I | N-Channel Super Junction Power MOSFET | NCE Power |
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