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NGTB40N60FL2WG PDF даташит

Спецификация NGTB40N60FL2WG изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «IGBT ( Insulated Gate Bipolar Transistor )».

Детали детали

Номер произв NGTB40N60FL2WG
Описание IGBT ( Insulated Gate Bipolar Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NGTB40N60FL2WG Даташит, Описание, Даташиты
NGTB40N60FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
Features
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
5 ms Short−Circuit Capability
These are Pb−Free Devices
Typical Applications
Solar Inverters
Uninterruptible Power Supplies (UPS)
Welding
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Symbol
VCES
IC
Value
600
80
40
Unit
V
A
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
IF A
80
40
Diode Pulsed Current
TPULSE Limited by TJ Max
Pulsed collector current, Tpulse
limited by TJmax
Short−circuit withstand time
VGE = 15 V, VCE = 400 V,
TJ +150°C
Gate−emitter voltage
Transient gate−emitter voltage
(TPULSE = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Operating junction temperature
range
IFM 160 A
ICM 160 A
tSC 5 ms
VGE
$20
V
$30
V
PD W
366
183
TJ −55 to +175 °C
Storage temperature range
Lead temperature for soldering, 1/8
from case for 5 seconds
Tstg
TSLD
−55 to +175
260
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
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40 A, 600 V
VCEsat = 1.7 V
EOFF = 0.44 mJ
C
G
E
G
C
E
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
40N60FL2
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
NGTB40N60FL2WG TO−247
(Pb−Free)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2015
July, 2015 − Rev. 1
1
Publication Order Number:
NGTB40N60FL2W/D









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NGTB40N60FL2WG Даташит, Описание, Даташиты
NGTB40N60FL2WG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
Symbol
RqJC
RqJC
RqJA
Value
0.41
1.00
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
VGE = 0 V, IC = 500 mA
VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A, TJ = 175°C
VGE = VCE, IC = 350 mA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 175°C
VGE = 20 V , VCE = 0 V
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
600
1.50
4.5
1.70
1.85
5.5
2.00
6.5
0.5
6.0
200
V
V
V
mA
nA
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 20 V, VGE = 0 V, f = 1 MHz
VCE = 480 V, IC = 40 A, VGE = 15 V
Cies
Coes
Cres
Qg
Qge
Qgc
− 4060 −
− 179 −
− 115 −
− 170 −
− 41 −
− 87 −
pF
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Total switching loss
TJ = 25°C
VCC = 400 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15 V
TJ = 150°C
VCC = 400 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15 V
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
− 84 −
− 40 −
− 177 −
− 70 −
− 0.97 −
− 0.44 −
− 1.41 −
− 82 −
− 40 −
− 183 −
− 93 −
− 1.20 −
− 0.76 −
− 1.96 −
ns
mJ
ns
mJ
DIODE CHARACTERISTIC
Forward voltage
VGE = 0 V, IF = 40 A
VGE = 0 V, IF = 40 A, TJ = 175°C
VF
1.50 2.20 2.90
V
− 2.40 −
Reverse recovery time
Reverse recovery charge
Reverse recovery current
TJ = 25°C
IF = 40 A, VR = 200 V
diF/dt = 200 A/ms
trr − 72 − ns
Qrr − 275 − nC
Irrm
− 6.7 −
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
TJ = 175°C
IF = 40 A, VR = 400 V
diF/dt = 200 A/ms
trr
− 158 −
ns
Qrr − 980 − nC
Irrm
− 8.5 −
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NGTB40N60FL2WG Даташит, Описание, Даташиты
NGTB40N60FL2WG
TYPICAL CHARACTERISTICS
160
140
120
100
80
60
40
20
0
0
VGE = 15 V
to 20 V
13 V
TJ = 25°C
11 V
10 V
7V 9V
8V
12 3 45 6 7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
8
160
TJ = 150°C
140
120
VGE = 17 V
to 20 V
100
15 V
13 V
80
60 11 V
10 V
40
7V 9V
20 8 V
0
012 3 456 7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Output Characteristics
8
160
VGE = 20 V
140 to 15 V
13 V
120 TJ = −55°C
100
80 11 V
60
40 10 V
7V
20 9 V
0 8V
012 3 456 7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
8
160
TJ = 25°C
140
120
100 TJ = 150°C
80
60
40
20
0
0 2 4 6 8 10 12 14 16 18
VGE, GATE−EMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
3.00
2.75
2.50
IC = 60 A
2.25
2.00
1.75
1.50
1.25
1.00
IC = 40 A
IC = 20 A
IC = 5 A
0.75
0.50
−75 −50 −25 0
25 50 75 100 125 150 175 200
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. VCE(sat) vs. TJ
10,000
1000
100
10
0
Cies
Coes
Cres
TJ = 25°C
10 20 30 40 50 60 70 80 90 100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 6. Typical Capacitance
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Номер в каталогеОписаниеПроизводители
NGTB40N60FL2WGIGBT ( Insulated Gate Bipolar Transistor )ON Semiconductor
ON Semiconductor

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