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PDF NGTB40N65IHL2WG Data sheet ( Hoja de datos )
| Número de pieza | NGTB40N65IHL2WG | |
| Descripción | IGBT | |
| Fabricantes | ON Semiconductor | |
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NGTB40N65IHL2WG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast co−packaged free wheeling diode with a low
forward voltage.
Features
• Extremely Efficient Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for Low Losses in IH Cooker Application
• TJmax = 175°C
• Soft, Fast Free Wheeling Diode
• This is a Pb−Free Device
Typical Applications
• Inductive Heating
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited
by TJmax
Gate−emitter voltage
Transient Gate Emitter Voltage
(tp = 5 ms, D < 0.010)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Operating junction temperature
range
VCES
IC
ICM
IF
IFM
VGE
PD
TJ
650
80
40
160
80
40
160
$20
$30
300
150
−55 to +175
V
A
A
A
A
V
W
°C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +175
260
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
40 A, 650 V
VCEsat = 1.8 V
Eoff = 0.36 mJ
C
G
E
G
C
E
TO−247
CASE 340AL
MARKING DIAGRAM
40N65IHL2
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB40N65IHL2WG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2015
May, 2015 − Rev. 1
1
Publication Order Number:
NGTB40N65IHL2W/D
1 page  
NGTB40N65IHL2WG
1.5
VCE = 400 V
VGE = 15 V
IC = 40 A
1 TJ = 150°C
TYPICAL CHARACTERISTICS
1000
Eoff td(off)
100 tf
0.5
0 5 15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
VCE = 400 V
VGE = 15 V
IC = 40 A
10 TJ = 150°C
5 15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 14. Switching Time vs. Rg
1
0.9 VGE = 15 V
0.8
IC = 40 A
Rg = 10 W
0.7 TJ = 150°C
Eoff
0.6
0.5
0.4
0.3
0.2
0.1
0
175 225 275 325 375 425 475 525
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
575
1000
td(off)
100
tf
10
175
VGE = 15 V
IC = 40 A
Rg = 10 W
TJ = 150°C
225 275 325 375 425 475 525 575
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Switching Time vs. VCE
1000
100
10
1 ms
dc operation
100 ms
50 ms
1000
100
1
0.1
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
1000
10
VGE = 15 V, TC = 125°C
1
1 10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
www.onsemi.com
5
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| PDF Descargar | [ Datasheet NGTB40N65IHL2WG.PDF ] | |
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