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PDF HM2301A Data sheet ( Hoja de datos )
| Número de pieza | HM2301A | |
| Descripción | P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | H&M Semiconductor | |
| Logotipo |  |
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HM2301A
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM2301A uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
GENERAL FEATURES
● VDS = -20V,ID = -3A
RDS(ON) < 140mΩ @ VGS=-2.5V
RDS(ON) < 110mΩ @ VGS=-4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
D
G
S
Schematic diagram
$V+%
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOT-23/ top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
A1sHB
HM2301A
SOT-23-3L
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current -Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
-20
±10
-3
-10
1
-55 To 150
125
Unit
V
V
A
A
W
℃
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS VDS=-20V,VGS=0V
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
Page 1
Min Typ Max Unit
-20 -24
--
-
-1
V
μA
v1.1
1 page  
HM2301A
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
Page 5
v1.1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HM2301A.PDF ] | |
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