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PDF CJU02N60 Data sheet ( Hoja de datos )
| Número de pieza | CJU02N60 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | JCET | |
| Logotipo |  |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252 Plastic-Encapsulate MOSFETS
CJU02N60 N-Channel Power MOSFET
General Description
The high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage-blocking capability without degrading
performance over time. In addition , this advanced MOSFET is designed
to withstand high energy in avalanche and commutation modes . The
new energy efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power suppliers, converters and PWM motor controls ,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage transients.
TO-252
1. GATE
2. DRAIN
3. SOURCE
1
2
3
FEATURES
z Robust High Voltage Termination
z Avalanche Energy Specified
z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
z Diode is Characterized for Use in Bridge Circuits
z IDSS and VDS(on) Specified at Elevated Temperature
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source voltage
Symbol
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Power Dissipation
PD
Single Pulsed Avalanche Energy*
EAS
Thermal Resistance from Junction to Ambient
RθJA
Junction Temperature
TJ
Storage Temperature
Tstg
*EAS condition: Tj=25℃,VDD=100V,VGS=10V,L=10mH,IAS=2A,RG=25Ω
Value
600
±20
2
4
1.25
20
100
150
-50 ~+150
Unit
V
A
W
mJ
℃/W
℃
A,Mar,2011
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CJU02N60.PDF ] | |
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