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CJU10N10 PDF даташит

Спецификация CJU10N10 изготовлена ​​​​«JCET» и имеет функцию, называемую «N-Channel Power MOSFET / Transistor».

Детали детали

Номер произв CJU10N10
Описание N-Channel Power MOSFET / Transistor
Производители JCET
логотип JCET логотип 

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CJU10N10 Даташит, Описание, Даташиты
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU10N10
V(BR)DSS
100V
N-Channel Power MOSFET
RDS(on)MAX
  0.14Ω@10V
ID
9.6A  
TO-252-2L
GENERAL DESCRIPTION
The CJU10N10 provide excellent RDS(ON), low gate charge and
operation with low gate voltages. This device is suitable for use as a
load switch or in PWM applications.
1. GATE
2. DRAIN
3. SOURCE
FEATURE
z Excellent package for good heat dissipation
z Ultra low gate charge
z Low reverse transfer capacitance
z Fast switching capability
z Avalanche energy specified
MARKING
CJU10N10= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
APPLICATION
z Power switching application
EQUIVALENT CIRCUIT
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes ,
1/8”from case for 5 seconds
Symbol
VDS
VGS
ID
IDM
EAS
RθJA
TJ
TSTG
TL
www.cj-elec.com
1
Value
100
±20
9.6
38.4
150
100
150
-55 ~+150
260
Unit
V
A
mJ
/W
E,Feb,2016









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CJU10N10 Даташит, Описание, Даташиты
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 unless otherwise specified
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
V(BR)DSS
IDSS
IGSS
VGS = 0V, ID =250µA
VDS =100V, VGS =0V
VDS =0V, VGS 20V
On characteristics (note2)
Gate-threshold voltage
Static drain-source on-resistance
VGS(th)
RDS(on)
VDS =VGS, ID =250µA
VGS =10V, ID =5A
Dynamic characteristics (note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =25V,VGS =0V,f =1MHz
Switching characteristics (note 3)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=30V, RG=2.5, ID =2A,
VGS =10V
VDS =30V,VGS =10V,ID =3A
Drain-Source Diode Characteristics
Drain-source diode forward voltage (note2)
Continuous drain-source diode forward
current
VSD VGS = 0V, IS =9A
IS
Pulsed drain-source diode forward current
ISM
Notes :
1. IL=7A, VDD=50V, RG=25,Starting TJ=25.
2. Pulse Test : Pulse width300µs, duty cycle 2%.
3. Guaranteed by design, not subject to production
Min Typ Max Unit
100 V
1 µA
±100 nA
1.2 2.0 2.5
0.115 0.14
V
690
120 pF
90
11
7.4
ns
35
9.1
15.5 nC
3.2 nC
4.7 nC
1.2 V
9.6 A
38.4 A
www.cj-elec.com
2
E,Feb,2016









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CJU10N10 Даташит, Описание, Даташиты
Typical Characteristics
100
Pulsed
Output Characteristics
VGS=8V
10
VGS=6V
VGS=4V
VGS=3V
1
0.1
0.1
VGS=2.5V
1 10
DRAIN TO SOURCE VOLTAGE VDS (V)
100
200
180
Ta=25
Pulsed
160
140
120
100
80
60
40
20
R
DS(ON)
——
I
D
VGS=10V
100 2000
4000
6000
8000
DRAIN CURRENT ID (mA)
9600
Pulsed
1000
I
S
——
V
SD
9600
100 Ta=100Ta=25
10
1
0.1
0
200 400 600 800 1000
SOURCE TO DRAIN VOLTAGE VSD (mV)
1200
100
VDS=10V
Pulsed
Transfer Characteristics
10
Ta=25
1
0.1
2.0
2.5 3.0 3.5 4.0 4.5
GATE TO SOURCE VOLTAGE VGS (V)
5.0
RDS(ON)——
V
GS
500
Pulsed
ID=5A
400
300
Ta=100
200
100
Ta=25
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
GATE TO SOURCE VOLTAGE VGS (V)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
Threshold Voltage
ID=250uA
50 75 100
JUNCTION TEMPERATURE TJ ()
125
www.cj-elec.com
3
E,Feb,2016










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