CJU18P10 PDF даташит
Спецификация CJU18P10 изготовлена «JCET» и имеет функцию, называемую «P-Channel Power MOSFET». |
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Детали детали
Номер произв | CJU18P10 |
Описание | P-Channel Power MOSFET |
Производители | JCET |
логотип |
5 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU18P10 P-Channel Power MOSFET
V(BR)DSS
-100V
RDS(on)MAX
100mΩ@-10V
ID
-18A
TO-252-2L
GENERAL DESCRIPTION
The CJU18P10 uses advanced trench technology and design to provide excellent
RDS(on) with low gate charge. It can be used in a wide variety of applications. It is ESD
protested.
1. GATE
2. DRAIN
3. SOURCE
FEATURE
VDS =-100V,ID =-18A
RDS(on) <100mΩ @ VGS=-10V (Typ:85mΩ)
ESD Protection
Advanced trench process technology
Reliable and rugged
High density cell design for ultra low On-Resistance
APPLICATION
Power management in notebook computer
Portable equipment and battery powered systems
MARKING
EQUIVALENT CIRCUIT
CJU18P10= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes ,
1/8”from case for 5 seconds
Symbol
VDS
VGS
ID
IDM
EAS
RθJA
TJ
TSTG
TL
www.cj-elec.com
1
Value
-100
±20
-18
-72
220
100
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
A-1,Feb,2016
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MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
On characteristics (note2)
Gate-threshold voltage
Static drain-source on-sate resistance
Forward transconductance
Dynamic characteristics (note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching characteristics (note 3)
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
V(BR) DSS
IDSS
IGSS
VGS = 0V, ID =-250µA
VDS =-100V, VGS =0V
VDS =0V, VGS =±20V
VGS(th)
RDS(on)
gFS
VDS =VGS, ID =-250µA
VGS =-10V, ID =-16A
VDS =-50V, ID =-10A
Ciss
Coss
Crss
VDS =-25V,VGS =0V,
f =1MHz
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=-80V, VGS=-10V,
ID=-16A
VDD=-50V,VGS=-10V,
RG=9.1Ω, ID=-16A
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note2)
Continuous drain-source diode forward
current
VSD VGS =0V, IS=-16A
IS
Pulsed drain-source diode forward current
ISM
Notes:
1. L=0.5mH,VDD=-50V,VG=-10V,RG=25Ω,Starting TJ=25℃.
2. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
3. Guaranteed by design, not subject to production.
Min Typ
-100
-1 -1.9
85
5
2100
590
140
61
14
29
16
73
34
57
Max Unit
V
-1 µA
±20 µA
-3 V
100 mΩ
S
pF
nC
ns
-1.2 V
-18 A
-72 A
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2
A-1,Feb,2016
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Typical Characteristics
Output Characteristics
-20
V =-3.8V,-4V,-5V
GS
T =25℃
a
Pulsed
-15
V =-3.5V
GS
-10
-5
-0
-0
V =-3.2V
GS
V =-3V
GS
-5 -10 -15
DRAIN TO SOURCE VOLTAGE V (V)
DS
100
T =25℃
a
Pulsed
90
R
DS(ON)
——
I
D
-20
80
V =-10V
GS
70
60
-2 -4 -6 -8 -10 -12 -14 -16 -18
DRAIN CURRENT I (mA)
D
-18
Pulsed
-10
I
S
——
V
SD
T =100℃
a
T =25℃
a
-1
-0.1
-0
-200
-400
-600
-800
-1000 -1200 -1400
SOURCE TO DRAIN VOLTAGE V (mV)
SD
-1600
-20
V =-10V
DS
Pulsed
-16
Transfer Characteristics
-12
T =100℃
-8 a T =25℃
a
-4
-0
-0
300
250
200
150
100
50
-1 -2 -3 -4 -5
GATE TO SOURCE VOLTAGE V (V)
GS
-6
R —— V
DS(ON)
GS
Pulsed
I =-16A
D
T =100℃
a
T =25℃
a
-2 -3 -4 -5 -6 -7 -8 -9 -10
GATE TO SOURCE VOLTAGE V (V)
GS
Threshold Voltage
-4
-3
I =-250uA
D
-2
-1
-0
25 50 75 100 125
JUNCTION TEMPERATURE T (℃)
J
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3
A-1,Feb,2016
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