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CJU30N03 PDF даташит

Спецификация CJU30N03 изготовлена ​​​​«JCET» и имеет функцию, называемую «N-Channel Power MOSFET / Transistor».

Детали детали

Номер произв CJU30N03
Описание N-Channel Power MOSFET / Transistor
Производители JCET
логотип JCET логотип 

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CJU30N03 Даташит, Описание, Даташиты
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU30N03 N-Channel Power MOSFET
GENERAL DESCRIPTION
The CJU30N03 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge. It can be used in a
wide variety of applications.
FEATURE
z High density cell design for ultra low Rdson
z Fully characterized avalanche voltage and current
z Good stability and uniformity with high EAS
z Excellent package for good heat dissipation
z Special process technology for high ESD capability
APPLICATION
z Power switching application
z Hard switched and high frequency circuits
z Uninterruptible power supply
TO-252-2L
1. GATE
2. DRAIN
3. SOURCE
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Single Pulsed Avalanche Energy*
EAS
Power Dissipation
PD
Thermal Resistance from Junction to Ambient
RθJA
Junction Temperature
TJ
Storage Temperature
Tstg
*EAS condition: VDD=20V,L=0.5mH, RG=25, Starting TJ = 25°C
Value
30
±20
30
80
72
1.25
100
150
-50 ~+150
Unit
V
A
mJ
W
/W
www.cj-elec.com
1
A-3,Nov,2015









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CJU30N03 Даташит, Описание, Даташиты
Electrical characteristics (Ta=25unless otherwise noted)
Parameter
Symbol
Off characteristics
Drain-source breakdown voltage
V(BR) DSS
Zero gate voltage drain current
IDSS
Gate-body leakage current
On characteristics (note1)
IGSS
Gate-threshold voltage
VGS(th)
Static drain-source on-resistance
RDS(on)
Static drain-source on-resistance
RDS(on)
Dynamic characteristics (note 2)
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
Switching characteristics (note 2)
Crss
Total gate charge
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall time
tf
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note1)
Continuous drain-source diode forward
current
VSD
IS
Pulsed drain-source diode forward current
Notes:
ISM
1. Pulse Test : Pulse Width300µs, duty cycle 2%.
2. Guaranteed by design, not subject to production.
Test Condition
VGS = 0V, ID =250µA
VDS =30V, VGS =0V
VDS =0V, VGS =±20V
VDS =VGS, ID =250µA
VGS =10V, ID =15A
VGS =4.5V, ID=15A
VDS =15V,VGS =0V,
f =1MHz
VDS=15V, VGS=10V,
ID=20A
VDD=15V,ID=2A,
VGS=10V,RG=3,
RL=0.75
VGS =0V, IS=10A
Min Typ Max Unit
30 V
1 µA
±100 nA
1 1.5 2.2 V
9 14 m
11 25 m
938
142 pF
99
17.5
3 nC
4.1
5
12
ns
19
6
1.2 V
30 A
80 A
www.cj-elec.com
2
A-3,Nov,2015









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CJU30N03 Даташит, Описание, Даташиты
Typical Characteristics
80
Pulsed
70
60
Output Characteristics
V = 6,8,10V
GS
V = 4.5V
GS
50
40
30
V = 3.5V
GS
20
V = 3V
GS
10
0
012345
DRAIN TO SOURCE VOLTAGE V (V)
DS
16
15
T =25
a
14 Pulsed
13
12
11
10
9
8
7
6
5
4
3
2
0.0 2.5 5.0
R
DS(ON)
——
I
D
V =4.5V
GS
V =10V
GS
7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0
DRAIN CURRENT I (A)
D
25
Pulsed
10
I
S
——
V
SD
1
T =100
a
T =25
a
0.1
0.01
1E-3
0
200 400 600 800 1000
SOURCE TO DRAIN VOLTAGE V (mV)
SD
1200
20
V =5V
DS
18 Pulsed
16
Transfer Characteristics
14
12
10
T =100
a
T =25
8a
6
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
GATE TO SOURCE VOLTAGE V (V)
GS
4.0
R —— V
DS(ON)
GS
34
32
Pulsed
30 I =15A
D
28
26
24
22
20
18
16 T =100
a
14
12
10
8
6 T =25
a
4
2
0
2 3 4 5 6 7 8 9 10
GATE TO SOURCE VOLTAGE V (V)
GS
Threshold Voltage
2.5
2.0
I =250uA
D
1.5
1.0
0.5
0.0
25
50 75 100
JUNCTION TEMPERATURE T ()
J
125
www.cj-elec.com
3
A-3,Nov,2015










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