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CJU40P04 PDF даташит

Спецификация CJU40P04 изготовлена ​​​​«JCET» и имеет функцию, называемую «P-Channel Power MOSFET».

Детали детали

Номер произв CJU40P04
Описание P-Channel Power MOSFET
Производители JCET
логотип JCET логотип 

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CJU40P04 Даташит, Описание, Даташиты
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU40P04 P-Channel Power MOSFET
V(BR)DSS
-40V
RDS(on)MAX
  14mΩ@-10V
ID
-40A
TO-252-2L
 
DESCRIPTION
The CJU40P04 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge. This device is well
1. GATE
2. DRAIN
3. SOURCE
suited for high current load applications.
FEATURES
z High density cell design for ultra low RDS(ON)
z Fully characterized Avalanche voltage and current
z Good stability and uniformity with high EAS
APPLICATIONS
z Excellent package for good heat dissipation
z Special process technology for high ESD capability
z Power switching application
z Hard switched and high frequency circuits
z Uninterruptible Power Supply
MARKING
EQUIVALENT CIRCUIT
CJU40P04= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
MAXIMUM RATINGS ( Ta=25unless otherwise noted )
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).EAS condition: VDD=-20V,L=1mH, RG=25, Starting TJ = 25°C
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD
RθJA
TJ
Tstg
TL
Limit
-40
±20
-40
-160
544
1.25
100
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
/W
www.cj-elec.com
1
A-3,Feb,2016









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CJU40P04 Даташит, Описание, Даташиты
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 unless otherwise specified
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
V(BR) DSS
IDSS
IGSS
VGS = 0V, ID =-250µA
VDS =-40V, VGS =0V
VDS =0V, VGS =±20V
On characteristics (note1)
Gate-threshold voltage
Static drain-source on-sate resistance
Forward transconductance
VGS(th)
RDS(on)
gFS
VDS =VGS, ID =-250µA
VGS =-10V, ID =-12A
VDS =-5V, ID =-12A
Dynamic characteristics (note 2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =-20V,VGS =0V,
f =1MHz
Switching characteristics (note 2)
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=-20V, VGS=-10V,
ID=-12A
VDD=-20V, ID=-20A
VGS=-10V,RG=3,
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note1)
Continuous drain-source diode forward
current (note3)
VSD
IS
Pulsed drain-source diode forward current
ISM
Notes:
1. Pulse Test : Pulse Width300µs, duty cycle 2%.
2. Guaranteed by design, not subject to production.
3. Surface Mounted on FR4 Board, t10 sec.
VGS =0V, IS=-20A
Min Typ
Max Unit
-40 V
-1 µA
±100
nA
-1.5 -1.85
12
34
-3 V
14 m
S
2960
370
310
pF
72
14 nC
15
10
18
ns
38
24
-1.2
-40
-160
V
A
A
www.cj-elec.com
2
A-3,Feb,2016









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CJU40P04 Даташит, Описание, Даташиты
Typical Characteristics
-50
Pulsed
Output Characteristics
V =--6.0V
GS
V =--4.5V
GS
V =--10.0V
GS
-40
V =--4.0V
GS
-30
-20
V =--3.5V
GS
-10
-0
-0 -1 -2 -3 -4 -5
DRAIN TO SOURCE VOLTAGE V (V)
DS
20
T =25
18 a
Pulsed
16
14
12
10
8
6
4
2
0
-500
-5000
R
DS(ON)
——
I
D
V =-10V
GS
-10000
-15000
DRAIN CURRENT I (mA)
D
-20000
-25000
-100
Pulsed
-10
-1
-0.1
I
S
——
V
SD
T =100
a
T =25
a
-0.01
-1E-3
-0
-200
-400
-600
-800
-1000
SOURCE TO DRAIN VOLTAGE V (mV)
SD
-1200
-50
V =-5V
DS
Pulsed
-40
Transfer Characteristics
-30
-20 T =125
a
T =25
a
-10
-0
-1.5
-2.0 -2.5 -3.0 -3.5 -4.0
GATE TO SOURCE VOLTAGE V (V)
GS
-4.5
R —— V
DS(ON)
GS
30
28 Pulsed
I =-12A
D
26
24
22
20
T =100
18 a
16
14
12
T =25
a
10
8
6
-4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -8.5 -9.0 -9.5 -10.0
GATE TO SOURCE VOLTAGE V (V)
GS
Threshold Voltage
-3.0
-2.5
-2.0
I =-250uA
D
-1.5
-1.0
-0.5
-0.0
25
50 75 100
JUNCTION TEMPERATURE T ()
J
125
www.cj-elec.com
3
A-3,Feb,2016










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