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PDF NTE2147 Data sheet ( Hoja de datos )
| Número de pieza | NTE2147 | |
| Descripción | 4K Static Random Access Memory | |
| Fabricantes | NTE | |
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NTE2147
Integrated Circuit
4K Static Random Access Memory (SRAM)
Description:
The NTE2147 is a 4096−bit static Random Access Memory (SRAM) in an 18−Lead DIP type package
organized as 4096 words by 1−bit. Using a scaled NMOS technology, it incorporates an innovative
design approach which provides the ease−of−use features associated with non−clocked static me-
mories and the reduced standby power dissipation associated with clocked static memories. The re-
sult is low standby power dissipation without the need for clocks, address setup, and hold times. In
addition, data rates are not reduced due to cycle times that are longer than access times.
CS controls the power down feature. In less than a cycle time after CS goes high − deselecting the
NTE2147 − the part automatically reduces its power requirements and remains in this lower power
standby mode as long as CS remains high. This device feature results in system power savings as
great as 85% in larger systems, where the majority of devices are deselected.
The NTE2147 is directly TTL compatible in all respects: inputs, outputs, and a single +5V supply.
The data is read out non−destructively and has the same polarity as the input data. A data input and
a separate three−state output are used.
Features:
D Scaled NMOS Technology
D Maximum Access Time: 55ns (Supply Current, Active: 160mA; Standby: 20mA)
D Completely Static Memory − No Clock or Timing Strobe Required
D Equal Access and Cycle Times
D Single +5V Supply
D Automatic Power−Down
D Directly TTL Compatible − All Inputs and Outputs
D Separate Data Input and Output
D Three−State Output
Absolute Maximum Ratings: (TA = +25°C, Note 1 unless otherwise specified)
Voltate On Any Pin (With Respect to GND), VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −3.5V to +7.0V
DC Output Current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −10° to +85°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Note 1. Stress above those listed under “Absolute Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification
is not inplied. Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet NTE2147.PDF ] | |
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