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PDF CJU55P30 Data sheet ( Hoja de datos )
| Número de pieza | CJU55P30 | |
| Descripción | P-Channel Power MOSFET | |
| Fabricantes | JCET | |
| Logotipo |  |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU55P30 P-Channel Power MOSFET
DESCRIPTION
The CJU55P30 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge. It can be used in a
wide variety of applications.
TO-252-2L
FEATURES
z High density cell design for ultra low RDS(ON)
z Fully characterized avalanche voltage and current
z Good stability and uniformity with high EAS
z Excellent package for good heat dissipation
APPLICATIONS
z Power switching application
z Hard switched and high frequency circuits
z Uninterruptible Power Supply(UPS)
MARKING
JCET LOGO
CJU55P30= Part No.
XXX=Date Code
1. GATE
2. DRAIN
3. SOURCE
EQUIVALENT CIRCUIT
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).EAS condition: VDD=-25V,L=0.5mH, RG=25Ω, Starting TJ = 25°C
www.cj-elec.com
1
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD
RθJA
TJ
Tstg
TL
Limit
-55
±20
-30
-120
225
1.25
100
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
A-2,May,2015
1 page  
To-252(4R)-2L Tape and Reel
www.cj-elec.com
A-,May,2015
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CJU55P30.PDF ] | |
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