CJU75N06 PDF даташит
Спецификация CJU75N06 изготовлена «JCET» и имеет функцию, называемую «N-Channel Power MOSFET / Transistor». |
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Детали детали
Номер произв | CJU75N06 |
Описание | N-Channel Power MOSFET / Transistor |
Производители | JCET |
логотип |
5 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU75N06 N-Channel Power MOSFET
V(BR)DSS
RDS(on)MAX
ID
60V
11.5mΩ@10V
75A
GENERAL DESCRIPTION
The CJU75N06 uses advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of
applications.
TO-252-2L
1. GATE
2. DRAIN
3. SOURCE
FEATURE
VDS =60V,ID =75A
RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.1mΩ)
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
High density cell design for ultra low Rdson
Special process technology for high ESD capability
Fully characterized avalanche voltage and current
MARKING
APPLICATION
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
EQUIVALENT CIRCUIT
CJU75N06= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes ,
1/8”from case for 5 seconds
Symbol
VDS
VGS
ID
IDM
EAS
RθJA
TJ
TSTG
TL
Value
60
±20
75
300
300
100
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
www.cj-elec.com
1
A-2,Mar,2016
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026)(7(/(&75,&$/&+$5$&7(5,67,&6
Ta=25 Я unless otherwise specified
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
V(BR) DSS
IDSS
IGSS
VGS = 0V, ID =250µA
VDS =60V, VGS =0V
VDS =0V, VGS =±20V
On characteristics (note2)
Gate-threshold voltage
Static drain-source on-sate resistance
Forward transconductance
VGS(th)
RDS(on)
gFS
VDS =VGS, ID =250µA
VGS =10V, ID =30A
VDS =25V, ID =30A
Dynamic characteristics (note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =25V,VGS =0V,
f =1MHz
Switching characteristics (note 3)
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=30V, VGS=10V,
ID=30A
VDD=30V,VGS=10V,
RG=2.5Ω, ID=2A,
RL=15Ω
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note2)
Continuous drain-source diode forward
current
VSD VGS =0V, IS=30A
IS
Pulsed drain-source diode forward current
ISM
Notes:
1. L=0.5mH,VDD=30V,VG=10V,RG=25Ω,Starting TJ=25℃.
2. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
3. Guaranteed by design, not subject to production.
Min Typ
Max Unit
60 68
V
1 µA
±100
nA
2 2.7
4V
9.1 11.5 mΩ
20 S
2350
237
205
pF
50
12 nC
16
16
10
ns
45
12
1.2 V
75 A
300 A
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2
A-2,Mar,2016
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Typical Characteristics
Output Characteristics
1000
Ta=25℃
Pulsed
VGS=10V,15V
VGS=8V
100 VGS=7V
VGS=6V
VGS=5.5V
VGS=5V
10 VGS=4.5V
Transfer Characteristics
300
VDS=25V
Pulsed
100
Ta=25℃
1
0.1 1 10
DRAIN TO SOURCE VOLTAGE VDS (V)
16
Ta=25℃
14 Pulsed
R
DS(ON)
——
I
D
12
10
8 VGS=10V
6
4
2
5 10 15 20 25
DRAIN CURRENT ID (A)
100
Pulsed
10
I
S
——
V
SD
100
30
1 Ta=100℃
0.1
Ta=25℃
0.01
1E-3
0.0
0.2 0.4 0.6 0.8 1.0 1.2
SOURCE TO DRAIN VOLTAGE VSD (V)
1.4
10
4 5 6 7 8 9 10
GATE TO SOURCE VOLTAGE VGS (V)
RDS(ON)——
V
GS
60
Pulsed
ID=25A
50
40
30
20
10 Ta=25℃
Ta=100℃
0
3 4 5 6 7 8 9 10
GATE TO SOURCE VOLTAGE VGS (V)
Threshold Voltage
4
3
ID=250uA
2
1
25 50 75 100 125
JUNCTION TEMPERATURE TJ (℃)
www.cj-elec.com
3
A-2,Mar,2016
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