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SBW3320 PDF даташит

Спецификация SBW3320 изготовлена ​​​​«WINSEMI SEMICONDUCTOR» и имеет функцию, называемую «High Voltage Fast-Swit NPN Power Transistor».

Детали детали

Номер произв SBW3320
Описание High Voltage Fast-Swit NPN Power Transistor
Производители WINSEMI SEMICONDUCTOR
логотип WINSEMI SEMICONDUCTOR логотип 

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SBW3320 Даташит, Описание, Даташиты
SBW3320
High Voltage Fast-Switching NPN Power Transistor
Features
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
TO3P
SBW3320
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCES
VCEO
VEBO
IC
ICP
IB
IBM
PC
TJ
TSTG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25
Operation Junction Temperature
Storage Temperature
Test Conditions
VBE = 0
IB = 0
IC = 0
tP = 5ms
TO247
SBW3320W
Value
500
400
7.0
15
30
5.0
10
80
150
-65 ~ 150
Units
V
V
V
A
A
A
A
W
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case
RθJA Thermal Resistance Junction to Ambient
Value
1.56
62.5
Units
/W
/W
Jal 2011 .Rev.2
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
T02-1









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SBW3320 Даташит, Описание, Даташиты
SBW3320
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
VCEO(sus) Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
VCE(sat)
Collector-Emitter Saturation Voltage
Ic=6.0A,Ib=1.2A
Ic=8.0A,Ib=1.6A
Tc=100
VBE(sat) Base-Emitter Saturation Voltage
IEBO Emitter-Base Cutoff Current
IcBO Collector-Base Cutoff Current
hFE DC Current Gain
ts Storage Time
tf Fall Time
fT Current Gain Band with Prouct
Ic=6.0A,Ib=1.2A
Ic=8.0A,Ib=1.6A
Tc=100
Veb=7V,Ic=0V
Vcb=500V,Ic=0V
Vce=5V, Ic=5.0A
Vce=5V, Ic=8.0A
VCC=5.0V , Ic=0.5A
(UI9600)
Vce=10V, Ic=0.5A
Value
Units
Min Typ Max
400 - - V
- - 1.0 V
- - 2.0 V
- - 1.2 V
--
--
--
10 -
6-
4-
-
4
1.5 V
1 mA
1 mA
40
30
6
0.8
MHz
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
Steady, keep you advance
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SBW3320 Даташит, Описание, Даташиты
SBW3320
Steady, keep you advance
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Номер в каталогеОписаниеПроизводители
SBW3320High Voltage Fast-Swit NPN Power TransistorWINSEMI SEMICONDUCTOR
WINSEMI SEMICONDUCTOR

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