SF10A200H PDF даташит
Спецификация SF10A200H изготовлена «AUK» и имеет функцию, называемую «Ultra Fast Recovery Diode». |
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Детали детали
Номер произв | SF10A200H |
Описание | Ultra Fast Recovery Diode |
Производители | AUK |
логотип |
5 Pages
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ULTRAFAST RECOVERY POWER RECTIFIER
SF10A200H
Ultrafast Recovery Rectifier
Description
The SF10A200H is a silicon rectifier in a 2-Lead TO220
full-pack type package designed, and is specially
suited for switching mode base drive and transistor
circuit. This device is intended for use in low voltage,
high frequency inverters, free-wheeling diode and polarity
protection.
Pin Configuration
Pin 1: Cathode
Pin 2: Anode
TO-220F-2L
Feature
Low forward voltage drop and leakage current
Ultra fast reverse recovery time
Low power loss and High efficiency
Full lead (Pb)-free and RoHS compliant device
Product Characteristics
IF(AV)
VRRM
VFM @ Tj=125℃
10A
200V
0.88V
Applications
Switching mode power supply
Free-wheeling diode for motor application
Polarity protection
Power switching circuits
trr 30ns
Ordering Information
Device
SF10A200H
Marking Code
SF10A200H
Package
TO-220F-2L
Packaging
Tube
Marking Information
AUK = Manufacture Logo
∆ = Control Code of Manufacture
YMDD = Date Code Marking
-. Y = Year Code
-. M = Monthly Code
-. DD = Daily Code
SF10A200H = Specific Device Code
KSD-D0Q012-001
1
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Absolute Maximum Ratings (Limiting Values)
Characteristic
Maximum repetitive reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Storage temperature range
Maximum operating junction temperature
SF10A200H
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
Tstg
TJ
Value
200
Unit
V
10 A
120 A
-45℃ to +150℃
150
℃
℃
Thermal Characteristics
Characteristic
Maximum thermal resistance
junction to case
Symbol
Rth(j-c)
Value
4.0
Unit
℃/W
Electrical Characteristics
Characteristic
Symbol
Peak forward voltage drop
VFM (1)
Reverse leakage current
IRM (1)
Reverse recovery time
trr
Junction capacitance
Cj
Note : (1) Pulse test : tP≤380 ㎲, Duty cycle≤2%
Test Condition
IFM = 10A
VR = VRRM
Tj=25℃
Tj=125℃
Tj=25℃
Tj=125℃
IF = 1A, di/dt =-100 A/us
VR = 4VDC, f=1MHz
Min.
-
-
-
-
-
-
Typ.
-
-
-
-
-
150
Max.
0.98
0.88
25
500
30
-
Unit
V
V
uA
uA
ns
pF
KSD-D0Q012-001
2
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Rating and Characteristic Curves
Fig. 1 VF - IF
Fig. 2 IR - VR
SF10A200H
Fig. 3 IO – PF
Fig. 4 CT - VR
Fig. 5 IFSM – Number of cycle
Fig. 6 IO derating - TC
KSD-D0Q012-001
3
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Номер в каталоге | Описание | Производители |
SF10A200H | Ultra Fast Recovery Diode | AUK |
SF10A200HPI | Ultra Fast Recovery Diode | AUK |
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DataSheet26.com | 2020 | Контакты | Поиск |