SDS19D PDF даташит
Спецификация SDS19D изготовлена «AUK» и имеет функцию, называемую «Switching Diode». |
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Детали детали
Номер произв | SDS19D |
Описание | Switching Diode |
Производители | AUK |
логотип |
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SDS19D
SWITCHING DIODE
High Voltage Switching Diode
General Description
General-purpose switching diodes, fabricated in planar
technology, and packaged in small SOD-323 surface
mounted device (SMD) packages.
Features and Benefits
Silicon epitaxial planar diode
High switching speed
Low forward drop voltage and low leakage current
“Green” device and RoHS compliant device
Available in full lead (Pb)-free device
SOD-323
Applications
Ultra high speed switching application
Ordering Information
Part Number
Marking Code
Package
Packaging
SDS19D
J1 □
SOD-323
Tape & Reel
Marking Information
J1□
J 1 = Specific Device Code
□ = Year & Week Code Marking
= Color band denote cathode
Pinning Information
Pin
1
2
Description
Cathode
Anode
Simplified Outline
Graphic Symbol
Rev. date: 25-AUG-10
KSD-D6C023-001
www.auk.co.kr
1 of 5
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Absolute Maximum Ratings (Tamb=25℃, Unless otherwise specified)
Characteristic
Symbol
Maximum repetitive peak reverse voltage
Continuous reverse voltage
Maximum average forward rectified current
Maximum repetitive peak forward current
Non-repetitive peak forward surge current(t=10ms)
Power dissipation 1)
1) Device mounted on FR-4 board with recommended pad layout.
VRM
VR
IO
IFM
IFSM
PD
SDS19D
Ratings
120
100
200
400
1.7
200
Unit
V
V
mA
mA
A
mW
Thermal Characteristics (Tamb=25℃, Unless otherwise specified)
Characteristic
Symbol
Thermal resistance, junction to ambient 1)
Operating junction temperature
Storage temperature range
1) Device mounted on FR-4 board with recommended pad layout.
Rth(j-a)
Tj
Tstg
Ratings
625
150
-55 ~ 150
Unit
C/W
C
C
Electrical Characteristics (Tamb=25℃, Unless otherwise specified)
Characteristic
Symbol
Test Condition
Reverse breakdown voltage
Forward drop voltage 2)
Reverse leakage current 3)
Total capacitance
VBR IF=100uA
VF IF=100mA
IF=200mA
VR=100V
IR
VR=100V, Ta=150℃
CT VR=0V, f=1MHz
Reverse recovery time
trr
IF=IR=30mA,
Irr=3mA, RL=100Ω
2) Pulse test: tP≤380㎲, Duty cycle≤2%
3) Pulse test: tP≤5㎳, Duty cycle≤2%
Min.
120
-
-
-
-
-
Typ. Max.
--
- 1.0
- 1.25
- 100
- 100
-5
Unit
V
V
V
nA
uA
pF
- - 50 ns
Rev. date: 25-AUG-10
KSD-D6C023-001
www.auk.co.kr
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Rating and Characteristic Curves
Fig. 1) Typical Forward Characteristics
SDS19D
Fig. 2) Typical Reverse Characteristics
Fig. 3) Typical Total Capacitance Characteristics Fig. 4) Power Dissipation vs. Ambient Temperature
Fig. 5) Reverse recovery time equivalent test circuit
Rev. date: 25-AUG-10
KSD-D6C023-001
www.auk.co.kr
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