HP8S36 PDF даташит
Спецификация HP8S36 изготовлена «ROHM Semiconductor» и имеет функцию, называемую «30V Nch+Nch Middle Power MOSFET». |
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Детали детали
Номер произв | HP8S36 |
Описание | 30V Nch+Nch Middle Power MOSFET |
Производители | ROHM Semiconductor |
логотип |
19 Pages
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HP8S36
30V Nch+Nch Middle Power MOSFET
Symbol
VDSS
RDS(on)(Max.)
ID
PD
Tr1:Nch Tr2:Nch
30V 30V
8.8mΩ 2.4mΩ
±27A ±80A
22W 29W
lFeatures
1) Low on - resistance.
2) Pb-free lead plating ; RoHS compliant.
3) Halogen Free.
4) Built in Schottky-barrier diode(Tr2)
lOutline
HSOP8
lInner circuit
Datasheet
lPackaging specifications
Packing
Embossed
Tape
lApplication
Reel size (mm)
330
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
12
2500
Taping code
TB
Marking
HP8S36
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Tr1:Nch Tr2:Nch
Unit
Drain - Source voltage
VDSS
30 30
V
Continuous drain current
ID*1
±27 ±80
A
ID
±12 ±32
A
Pulsed drain current
IDP*2
±48 ±128
A
Gate - Source voltage
VGSS
±20 ±12
V
Avalanche current, single pulse
IAS*3
12 32
A
Avalanche energy, single pulse
EAS*3
5.3 39.3
mJ
Power dissipation
element
total
PD*1
22 29
W
PD*4 3.0 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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© 2016 ROHM Co., Ltd. All rights reserved.
1/16
20160515 - Rev.001
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HP8S36
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Tr1:Nch
Tr2:Nch
total
Datasheet
Symbol
RthJC*1
RthJC*1
RthJA*4
Values
Min. Typ. Max.
- - 5.6
- - 4.3
- - 41.7
Unit
℃/W
℃/W
℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol Type
Conditions
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Tr1
V(BR)DSS
Tr2
ΔV(BR)DSS Tr1
ΔTj Tr2
VGS = 0V, ID = 1mA
VGS = 0V, ID = 1mA
ID = 1mA, referenced to 25℃
ID = 1mA, referenced to 25℃
Zero gate voltage
drain current
IDSS Tr1 VDS = 24V, VGS = 0V
Tr2 VDS = 24V, VGS = 0V
Gate - Source
leakage current
IGSS
Tr1 VDS = 0V, VGS = ±20V
Tr2 VDS = 0V, VGS = ±10V
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
VGS(th)
Tr1
Tr2
ΔVGS(th) Tr1
ΔTj Tr2
VDS = VGS, ID = 1mA
VDS = VGS, ID = 1mA
ID = 1mA, referenced to 25℃
ID = 1mA, referenced to 25℃
Static drain - source
on - state resistance
VGS = 10V, ID = 12A
Tr1
RDS(on)*5
VGS = 4.5V, ID = 12A
VGS = 10V, ID = 32A
Tr2
VGS = 4.5V, ID = 32A
Gate resistance
Tr1
RG f=1MHz, open drain
Tr2
Forward Transfer
Admittance
|Yfs|*5 Tr1 VDS = 5V, ID = 12A
Tr2 VDS = 5V, ID = 32A
*1Tc=25℃, Limited only by maximum temperature allowed.
*2 Pw ≦ 10μs, Duty cycle ≦ 1%
*3 L ⋍ 0.05mH, VDD = 15V, RG = 25Ω, STARTING Tj = 25℃ Fig.3-1,3-2
*4 Mounted on a Cu board (40×40×0.8mm)
*5 Pulsed
Values
Unit
Min. Typ. Max.
30 - -
V
30 - -
- 28 -
mV/℃
- 18.5 -
- -1
μA
- - 500
- - ±100
nA
- - ±100
1.3 - 2.5
V
1.3 - 2.5
- -3.87 -
mV/℃
- -2.38 -
- 6.7 8.8
- 9.1 13.3
mΩ
- 2.0 2.4
- 2.3 2.8
- 2.3 -
- 0.85 -
Ω
10 - -
S
30 - -
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© 2016 ROHM Co., Ltd. All rights reserved.
2/16
20160515 - Rev.001
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HP8S36
lElectrical characteristics (Ta = 25°C)
<Tr1>
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss
Coss
Crss
td(on)*5
tr*5
td(off)*5
tf*5
VGS = 0V
VDS = 15V
f = 1MHz
VDD ⋍ 15V, VGS = 10V
ID = 6A
RL = 2.5Ω
RG = 10Ω
<Tr2>
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss
Coss
Crss
td(on)*5
tr*5
td(off)*5
tf*5
VGS = 0V
VDS = 15V
f = 1MHz
VDD ⋍ 15V, VGS = 10V
ID = 16A
RL = 0.9Ω
RG = 10Ω
Datasheet
Values
Unit
Min. Typ. Max.
- 590 -
- 160 - pF
- 44 -
- 9.6 -
- 4.5 -
ns
- 25.5 -
- 3.4 -
Values
Min. Typ. Max.
- 6100 -
- 550 -
- 350 -
- 34 -
- 27 -
- 186 -
- 66 -
Unit
pF
ns
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
3/16
20160515 - Rev.001
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