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SDB85N03L PDF даташит

Спецификация SDB85N03L изготовлена ​​​​«SamHop» и имеет функцию, называемую «N-Channel Logic Level Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв SDB85N03L
Описание N-Channel Logic Level Enhancement Mode Field Effect Transistor
Производители SamHop
логотип SamHop логотип 

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SDB85N03L Даташит, Описание, Даташиты
S amHop Microelectronics C orp.
S DP /B 85N03L
May,2004 ver1.1
N-Channel Logic Level E nhancement Mode Field E ffect Transistor
4 P R ODUC T S UMMAR Y
F E AT UR E S
VDS S
30V
ID R DS (on) ( m W ) Max
5 @ VGS = 10V
83A
7.5 @ VGS = 4.5V
S uper high dense cell design for extremely low R DS (ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
GS
S DB S E R IE S
T O -263(DD-P AK )
G
D
S
S DP S E R IE S
TO-220
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
S ymbol
VDS
VGS
Limit
30
20
Drain C urrent-C ontinuous @ TJ=125 C
-P ulsed a
ID
IDM
83
249
Drain-S ource Diode Forward C urrent
IS
75
Maximum P ower Dissipation @ Tc=25 C
PD
Operating and S torage Temperature R ange TJ, TS TG
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
R JC
R JA
75
-65 to 175
2
62.5
1
Unit
V
V
A
A
A
W
C
C /W
C /W









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SDB85N03L Даташит, Описание, Даташиты
S DP /B 85N03L
E LE CTR ICAL CHAR ACTE R IS TICS (TC =25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS a
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
BVDSS
IDSS
IGSS
V G S (th)
R DS(ON)
VGS =0V, ID =250uA
VDS =24V, VGS =0V
VGS = 16V, VDS =0V
VDS =VGS, ID = 250uA
VGS = 10V, ID = 37.5A
VGS = 4.5V, ID = 30A
30 V
10 uA
100 nA
1 1.5 3 V
4 5 m ohm
5.5 7.5 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS b
ID(ON)
gFS
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS b
Turn-On Delay Time
tD(ON)
R ise Time
tr
Turn-Off Delay Time
tD(O F F )
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Gate-Drain Charge
Qgs
Qgd
VGS = 10V, VDS = 10V
VDS = 10V, ID = 37A
VDS =15V, VGS = 0V
f =1.0MHZ
VDD = 15V,
ID = 1A,
VGS= 10V
VGEN = 60 ohm
VDS =15V, ID =85A,VGS =10V
VDS =15V, ID =85A,VGS =4.5V
VDS =15V, ID = 85A,
VGS =10V
75
56
3800
1750
390
55
268
363
233
95.2
45
7.2
5.6
A
S
PF
PF
PF
ns
ns
ns
ns
nC
nC
nC
nC
2
4









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SDB85N03L Даташит, Описание, Даташиты
S DP /B 85N03L
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
4 Parameter
S ymbol Condition
Min Typ Max Unit
DRAIN-SOURCE DIODE CHARACTERISTICS a
Diode Forward Voltage
VSD VGS = 0V, Is =37.5A
0.9 1.3 V
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
120
V GS =10,9,8,7,6,5,4V
100
80
60
40
V GS =3V
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
12000
10000
8000
6000
4000
C is s
2000
C rss
C oss
0
0 5 10 15 20 25 30
V DS , Drain-to S ource Voltage (V )
F igure 3. C apacitance
25
20
25 C
15
10
5
T J=125 C
-55 C
0
01 2 3 4 56
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
2.2 V G S =10V
1.8 ID=37.5A
1.4
1.0
0.6
0.2
0
-50 -25 0 25 50 75 100 125
T j( C )
F igure 4. On-R es is tance Variation with
Te mpe ra ture
3










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Номер в каталогеОписаниеПроизводители
SDB85N03LN-Channel Logic Level Enhancement Mode Field Effect TransistorSamHop
SamHop

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