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SDB20D45D2 PDF даташит

Спецификация SDB20D45D2 изготовлена ​​​​«KODENSHI KOREA» и имеет функцию, называемую «LOW VOLTAGE SCHOTTKY RECTIFIER».

Детали детали

Номер произв SDB20D45D2
Описание LOW VOLTAGE SCHOTTKY RECTIFIER
Производители KODENSHI KOREA
логотип KODENSHI KOREA логотип 

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SDB20D45D2 Даташит, Описание, Даташиты
LOW VOLTAGE SCHOTTKY RECTIFIER
SDB20D45D2
Schottky Barrier Rectifier
Features
Low forward voltage drop and leakage current
Low power loss and High efficiency
4
Guard-ring for overvoltage protection
Dual common cathode rectifier
Full lead (Pb)-free and RoHS compliant device
123
1 2, 4 3
Pin 1, 3: Anode
Applications
Power supply - Output rectification
High efficiency SMPS
Free-wheeling diode
Reverse battery protection
Pin 2, 4: Cathode
D2-PAK
Product Characteristics
IF(AV)
VRRM
2 X 10A
45V
DC to DC systems
VFM at 125
0.5V
IFSM 120A
Description
Schottky barrier rectifier designed for high frequency miniature Switched Mode Power Supplies such as
adaptors and on board DC to DC converters.
Ordering Information
Device
Marking Code
Package
Packaging
SDB20D45D2
SDB20D45D2
D2-PAK
Tape & Reel
Marking Information
AUK
YMDD
SDB20D45D2
AUK = Manufacture Logo
= Control Code of Manufacture
YMDD = Date Code Marking
-. Y = Year Code
-. M = Monthly Code
-. DD = Daily Code
SDB20D45D2 = Specific Device Code
KSD-D6S006-001
1









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SDB20D45D2 Даташит, Описание, Даташиты
Absolute Maximum Ratings (Limiting Values)
Characteristic
Maximum repetitive reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
per diode
total device
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
Storage temperature range
Maximum operating junction temperature
SDB20D45D2
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
Tstg
TJ
Value
Unit
45 V
10
A
20
120 A
-45to +150
150
Thermal Characteristics
Characteristic
Maximum thermal resistance junction to case
per diode
total device
Symbol
Rth(j-c)
Value
3.0
2.8
Unit
/W
Electrical Characteristics (Per Diode)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Peak forward voltage drop
Reverse leakage current
VFM (1)
IRM (1)
IFM = 10A
VR = VRRM
Tj=25
Tj=125
Tj=25
Tj=125
-
-
-
-
- 0.54
- 0.50
- 1.5
- 150
Junction capacitance
Cj VR = 5VDC, f=1MHz
- 550 -
Note : (1) Pulse test : tP380 , Duty cycle2%
To evaluate the conduction losses use the following equation (Fig 4.) : PF = 0.35 x IF(AV) + 0.015 IF2(RMS)
IFM
Unit
V
V
mA
mA
pF
2 IF(AV)
IF(AV)
Forward Voltage : VFM = Vto + rd IFM
rd
Conduction Loss : PF = Vto IF(AV) + rd IF2(RMS)
VFM
Vto
KSD-D6S006-001
2









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SDB20D45D2 Даташит, Описание, Даташиты
Rating and Characteristic Curves
Fig. 1) Typical Forward Characteristics (Per diode)
SDB20D45D2
Fig. 2) Typical Reverse Characteristics (Per diode)
Fig. 3) Maximum Forward Derative Curve
Fig. 4) Forward Power Dissipation (Per diode)
Fig. 5) Maximum Non-Repetitive Peak Forward
Surge Current (Per diode)
Fig. 6) Typical Junction Capacitance (Per diode)
KSD-D6S006-001
3










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Номер в каталогеОписаниеПроизводители
SDB20D45D2LOW VOLTAGE SCHOTTKY RECTIFIERKODENSHI KOREA
KODENSHI KOREA

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