DataSheet26.com

SDB20D100D2 PDF даташит

Спецификация SDB20D100D2 изготовлена ​​​​«KODENSHI KOREA» и имеет функцию, называемую «HIGH VOLTAGE SCHOTTKY RECTIFIER».

Детали детали

Номер произв SDB20D100D2
Описание HIGH VOLTAGE SCHOTTKY RECTIFIER
Производители KODENSHI KOREA
логотип KODENSHI KOREA логотип 

5 Pages
scroll

No Preview Available !

SDB20D100D2 Даташит, Описание, Даташиты
HIGH VOLTAGE SCHOTTKY RECTIFIER
SDB20D100D2
Schottky Barrier Rectifier
Features
Low forward voltage drop and leakage current
Low power loss and High efficiency
4
Guard-ring for overvoltage protection
Dual common cathode rectifier
Full lead (Pb)-free and RoHS compliant device
123
1 2, 4 3
Pin 1, 3: Anode
Applications
Power supply - Output rectification
Pin 2, 4: Cathode
D2-PAK
High efficiency SMPS
Product Characteristics
Free-wheeling diode
IF(AV)
2 X 10A
Reverse battery protection
DC to DC systems
VRRM
VFM at 125
100V
0.72V
Description
IFSM 120A
Schottky barrier rectifier designed for high frequency miniature Switched Mode Power Supplies such as
adaptors and on board DC to DC converters.
Ordering Information
Device
Marking Code
Package
Packaging
SDB20D100D2
SDB20D100D2
D2-PAK
Tape & Reel
Marking Information
AUK
ΔYMDD
SDB20D100D2
AUK = Manufacture Logo
= Control Code of Manufacture
YMDD = Date Code Marking
-. Y = Year Code
-. M = Monthly Code
-. DD = Daily Code
SDB20D100D2 = Specific Device Code
KSD-D6S004-002
1









No Preview Available !

SDB20D100D2 Даташит, Описание, Даташиты
Absolute Maximum Ratings (Limiting Values)
Characteristic
Maximum repetitive reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
per diode
total device
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
Storage temperature range
Maximum operating junction temperature
SDB20D100D2
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
Tstg
TJ
Value
Unit
100 V
10
A
20
120 A
-45to +150
150
Thermal Characteristics
Characteristic
Maximum thermal resistance junction to case
per diode
total device
Symbol
Rth(j-c)
Value
3.0
2.8
Unit
/W
Electrical Characteristics (Per Diode)
Characteristic
Symbol
Peak forward voltage drop
VFM (1)
Reverse leakage current
IRM (1)
Junction capacitance
Cj
Note : (1) Pulse test : tP380 , Duty cycle2%
Test Condition
IFM = 10A
VR = VRRM
Tj=25
Tj=125
Tj=25
Tj=125
VR = 5VDC, f=1MHz
Min.
-
-
-
-
-
Typ.
-
-
-
-
-
Max.
0.85
0.72
20
20
350
Unit
V
V
uA
mA
pF
KSD-D6S004-002
2









No Preview Available !

SDB20D100D2 Даташит, Описание, Даташиты
Rating and Characteristic Curves
Fig. 1) Typical Forward Characteristics (Per diode)
SDB20D100D2
Fig. 2) Typical Reverse Characteristics (Per diode)
Fig. 3) Maximum Forward Derative Curve
Fig. 4) Forward Power Dissipation (Per diode)
Fig. 5) Maximum Non-Repetitive Peak Forward
Surge Current (Per diode)
Fig. 6) Typical Junction Capacitance (Per diode)
KSD-D6S004-002
3










Скачать PDF:

[ SDB20D100D2.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
SDB20D100D2HIGH VOLTAGE SCHOTTKY RECTIFIERKODENSHI KOREA
KODENSHI KOREA

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск