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SDB1040PI PDF даташит

Спецификация SDB1040PI изготовлена ​​​​«KODENSHI KOREA» и имеет функцию, называемую «LOW VOLTAGE SCHOTTKY RECTIFIER».

Детали детали

Номер произв SDB1040PI
Описание LOW VOLTAGE SCHOTTKY RECTIFIER
Производители KODENSHI KOREA
логотип KODENSHI KOREA логотип 

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SDB1040PI Даташит, Описание, Даташиты
LOW VOLTAGE SCHOTTKY RECTIFIER
SDB1040PI
Schottky Barrier Rectifier
Features
Low forward voltage drop and leakage current
Low power loss and High efficiency
ESD capability
Dual common cathode rectifier
Full lead (Pb)-free and RoHS compliant device
123
12
3
Pin configuration
Pin 1, 3 : Anode
Pin 2 : Cathode
Applications
Power supply - Output rectification
High efficiency SMPS
Free-wheeling diode
Reverse battery protection
DC to DC systems
TO-220F-3L
Product Characteristics
IF(AV)
VRRM
VFM at 125
IFSM
2 X 5A
40V
0.50V
120A
Description
The SDB1040PI has two schottky barriers arranged in a common cathode configuration. Typical
applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery
protection
Ordering Information
Device
SDB1040PI
Marking Code
SDB1040
Package
TO-220F-3L
Packaging
Tube
Marking Information
AUK
YMDD
SDB1040
AUK = Manufacture Logo
= Control Code of Manufacture
YMDD = Date Code Marking
-. Y = Year Code
-. M = Monthly Code
-. DD = Daily Code
SDB1040 = Specific Device Code
KSD-D0O001-002
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SDB1040PI Даташит, Описание, Даташиты
Absolute Maximum Ratings (Limiting Values)
Characteristic
Maximum repetitive reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
per diode
total device
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
Storage temperature range
Maximum operating junction temperature
SDB1040PI
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
Tstg
TJ
Value
Unit
40 V
5
A
10
120 A
-55to +150
150
Thermal Characteristics
Characteristic
Maximum thermal resistance junction to case
per diode
total device
Symbol
Rth(j-c)
Value
5.0
4.5
Unit
/W
Electrical Characteristics (Per Diode)
Characteristic
Symbol
Peak forward voltage drop
VFM (1)
Reverse leakage current
IRM (1)
Note : (1) Pulse test : tP380 , Duty cycle2%
Test Condition
IFM = 5A
VR = VRRM
Tj=25
Tj=125
Tj=25
Tj=125
Min.
-
-
-
-
Typ.
-
0.46
-
-
Max.
0.55
0.50
0.5
100
Unit
V
V
mA
mA
KSD-D0O001-002
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SDB1040PI Даташит, Описание, Даташиты
Electrical Characteristic Curves
Fig. 1 IO - VF (Per Diode)
SDB1040PI
Fig. 2 IR - VR (Per Diode)
Fig. 3 PF - IO (Per Diode)
Fig. 4 Cj - VR (Per Diode)
Fig. 5 IFSM – Number of cycle (Per Diode)
Fig. 6 IO derating - TC (Per Diode)
KSD-D0O001-002
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Номер в каталогеОписаниеПроизводители
SDB1040PH10A POWER SCHOTTKY RECTIFIERKODENSHI KOREA
KODENSHI KOREA
SDB1040PILOW VOLTAGE SCHOTTKY RECTIFIERKODENSHI KOREA
KODENSHI KOREA

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