CJQ7328 PDF даташит
Спецификация CJQ7328 изготовлена «JCET» и имеет функцию, называемую «Dual P-channel MOSFET». |
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Детали детали
Номер произв | CJQ7328 |
Описание | Dual P-channel MOSFET |
Производители | JCET |
логотип |
5 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ7328 Dual P-Channel MOSFET
V(BR)DSS
-30V
RDS(on)MAX
21mΩ@-10V
32mΩ@-4.5V
ID
-8A
SOP8
DESCRIPTION
The CJQ7328 uses advanced processing techniques to achieve
extremely low on-resistance. This benefit, combined with the
ruggedized device design that the MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device
for use in battery and load management.
FEATURES
Ultra Low On-Resistance
MARKING:
Q7328= Device code
YY=Date Code
Solid dot = Pin1 indicator
Solid dot = Green molding compound device,
if none,the normal device.
Equivalent Circuit
Maximum ratings (Ta=25℃ unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
Power Dissipation (note 2)
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
Tstg
Value
-30
±20
-8
-32
1.4
89
150
-55 ~+150
Unit
V
A
W
℃/W
℃
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1
E,Mar,2016
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026)(7(/(&75,&$/&+$5$&7(5,67,&6
Ta=25 Я unless otherwise specified
Parameter
Static Characteristics
Drain Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate body Leakage
Gate Threshold Voltage
Drain-Source on-state Resistance
(note 3)
Forward Transconductance
Dynamic Characteristics (note 4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Symbol
Test Condition
V(BR)DSS
IDSS
lGSS
VGS(th)
RDS(on)
gFs
VGS=0V,ID=-250µA
VDS=-24V, VGS=0V
VDS=0V, VGS=±20V
VDS =VGS, ID =-250µA
VGS =-10V, ID =-8A
VGS =-4.5V, ID =-6.8A
VDS =-10V, ID =-8A
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =-25V,VGS =0V,f =1MHz
VDS =-15V,VGS =-10V,ID =-8A
VDD=-15V,RD=15Ω
ID =-1A,VGS=-10V,RG=6Ω
Drain-Source Body Diode Characteristics
Diode Forward Voltage (note 3)
VSD IS=-2A,VGS=0V
Notes:
1. Repetitive rating : Pulse width limited by junction temperature.
2. Surface mounted on 1”×1” FR4 board,t≤10s.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤2%.
4. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
-30 V
-15 µA
±100
nA
-1 -1.5 -2.5
V
19
26
12
21
mΩ
32
S
2675
409
262
9.8
8.3
78
20
23
297
147
pF
nC
ns
-1.2 V
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7\SLFDO&KDUDFWHULVWLFV
40
Pulsed
35 -10V
Output Characteristics
-4.0V
30 -3.5V
25
20
-3.0V
15
10
5 VGS=-2.5V
0
-0 -2 -4 -6 -8
DRAIN TO SOURCE VOLTAGE VDS (V)
-10
R ——
DS(ON)
I
D
30
Ta=25℃
Pulsed
VGS=-4.5V
25
20 VGS=-10V
15
10
-0.5
-2 -4 -6
DRAIN CURRENT ID (A)
-8
-10
Ta=25℃
Pulsed
-1
I
S
——
V
SD
-0.1
-0.01
-1E-3
-1E-4
-400
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-600
-800
SOURCE TO DRAIN VOLTAGE VSD (mV)
-1000
3
-4
VDS=-24V
Pulsed
-3
Transfer Characteristics
T =100℃
a
-2
-1 Ta=25℃
-0
-0.0
-0.5 -1.0 -1.5 -2.0 -2.5
GATE TO SOURCE VOLTAGE VGS (V)
-3.0
R
DS(ON)
——
V
GS
10
Ta=25℃
Pulsed
1
0.1 ID=-8A
0.01
1E-3
-0
-1.6
-5 -10 -15
GATE TO SOURCE VOLTAGE VGS (V)
Threshold Voltage
-20
-1.4
ID=-250uA
-1.2
-1.0
25
50 75 100
JUNCTION TEMPERATURE TJ (℃)
125
E,Mar,2016
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