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CJQ4559 PDF даташит

Спецификация CJQ4559 изготовлена ​​​​«JCET» и имеет функцию, называемую «N-channel and P-channel MOSFETS».

Детали детали

Номер произв CJQ4559
Описание N-channel and P-channel MOSFETS
Производители JCET
логотип JCET логотип 

6 Pages
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CJQ4559 Даташит, Описание, Даташиты
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YY=Date Code
Solid dot = Pin1 indicator
Solid dot = Green molding compound device,
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Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
Continous Source-Drain Diode Current
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Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
Continous Source-Drain Diode Current
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Power Dissipation
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
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VDS
VGS
ID
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$3Mar6









No Preview Available !

CJQ4559 Даташит, Описание, Даташиты
026)(7 (/(&75,&$/ &+$5$&7(5,67,&6
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Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250μA
60
Zero gate voltage drain current
IDSS VDS =60V,VGS = 0V
Gate-body leakage current
IGSS VGS =±20V, VDS = 0V
Gate threshold voltage (note 2)
VGS(th) VDS =VGS, ID =250μA
1 2.1
Drain-source on-resistance(note 2)
RDS(on)
VGS =10V, ID =4.3A
VGS =4.5V, ID =3.9A
40
55
Forward tranconductance(note 2)
gFS VDS =15V, ID =4.3A
15
Diode forward voltage
VSD IS=1.7A, VGS = 0V
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Input Capacitance
Ciss
665
Output Capacitance
Coss VDS =15V,VGS =0V,f =1MHz
75
Reverse Transfer Capacitance
Crss
40
Gate Resistance
Rg f=1MHz
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Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VGEN=4.5V,VDD=30V,
ID=3.4A, RG=1¡ˈRL=8.8¡
Turn-off fall time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=30V,ID=4.3A,
VGS=4.5V
Qgd
2.3
2.6
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Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =-250μA
-60
Zero gate voltage drain current
IDSS VDS =-60V,VGS = 0V
Gate-body leakage current
IGSS VGS =±20V, VDS = 0V
Gate threshold voltage (note 2)
VGS(th) VDS =VGS, ID =-250μA
-1 -2.8
Drain-source on-resistance(note 2)
RDS(on)
VGS =-10V, ID =-3.1A
VGS =-4.5V, ID =-0.2A
60
92
Forward tranconductance(note 2)
gFS VDS =-15V, ID =-3.1A
8.5
Diode forward voltage
VSD IS=-2A, VGS = 0V
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Input Capacitance
Ciss
650
Output Capacitance
Coss VDS =-15V,VGS =0V,f =1MHz
95
Reverse Transfer Capacitance
Crss
60
Gate Resistance
Rg f=1MHz
6:,7&+,1* &+$5$&7(5,67,&6 QRWH 
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
td(on)
tr
td(off)
tf
VGEN=-4.5V,VDD=-30V,
ID=-2.4A,RG=1ȍ ˈ
RL=12.5¡
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=-30V,ID=-3.1A,
VGS=-4.5V
Qgd
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1.Surface mounted on FR4 board using the minimum recommended pad size.
2. Pulse Test : Pulse width=300ȝs, duty cycle”2%.
3. Switching characteristics are independent of operating junction temperature.
4. Graranted by designˈnot subject to producting.
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$3Mar6









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CJQ4559 Даташит, Описание, Даташиты
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Output Characteristics
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Номер в каталогеОписаниеПроизводители
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JCET

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