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Número de pieza | CJMPD08 | |
Descripción | P-Channel MOSFET | |
Fabricantes | JCET | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CJMPD08 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2X2-6L-A Plastic-Encapsulate MOSFETS
CJMPD08 P-Channel Power MOSFET
DFNWB2*2-6L-A
V(BR)DSS
-12V
RDS(on)MAX
60mΩ@-4.5 V
80mΩ@-2.5 V
ID
-3.6 A
General Description
The CJMPD08 uses advanced trench technology and design to
Provide excellent RDS(on) with low gate charge. This device is suitable for use
in DC-DC conversion applications.
FEATURE
z Low Profile for Easy Fit in Thin Environments
z Bidirectional Current Folw with Common Source Configuration
APPLICATIONS
z Optimized for Battery and Load Management Applications in Portable Equipment
z Li-Ion Battery Charging and Protection Circuits
z High Power Management in Portable , Battery Powered Products
z High Side Load Switch
MARKING:
Equivalent Circuit
front
back
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Storage Temperature
Junction Temperature
www.cj-elec.com
Symbol
VDS
VGS
ID
PD
RθJA
Tj
Tstg
1
Value
-12
±8
-
0.7
178
150
-55 ~+150
Unit
V
A
W
℃/W
℃
F,June,2016
1 page DFNWB2X2-6L Tape and Reel
www.cj-elec.com
5
F,June,2016
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet CJMPD08.PDF ] |
Número de pieza | Descripción | Fabricantes |
CJMPD08 | P-Channel MOSFET | JCET |
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