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PDF 6NM60-S Data sheet ( Hoja de datos )
| Número de pieza | 6NM60-S | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
6NM60-S
Preliminary
6.0A, 600V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 6NM60-S is a Super Junction MOSFET Structure and
is designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and a high rugged
avalanche characteristics. This power MOSFET is usually used at
DC-DC, AC-DC converters for power applications.
FEATURES
* RDS(on) < 1.4Ω @ VGS=10V, ID=3.0A
* Improved dv/dt capability
* Fast switching
* 100% avalanche tested
SYMBOL
Power MOSFET
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
6NM60L-TF1-T
6NM60G-TF1-T
6NM60L-TF3-T
6NM60G-TF3-T
6NM60L-TM3-T
6NM60G-TM3-T
6NM60L-TN3-R
6NM60G-TN3-R
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
TO-220F
TO-251
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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6NM60-S
Preliminary
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 6NM60-S.PDF ] | |
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