11NM60-U2 PDF даташит
Спецификация 11NM60-U2 изготовлена «Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL POWER MOSFET». |
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Детали детали
Номер произв | 11NM60-U2 |
Описание | N-CHANNEL POWER MOSFET |
Производители | Unisonic Technologies |
логотип |
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UNISONIC TECHNOLOGIES CO., LTD
11NM60-U2
11A, 600V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 11NM60-U2 is a Super Junction MOSFET
Structure and is designed to have better characteristics, such as
fast switching time, low gate charge, low on-state resistance
and a high rugged avalanche characteristics. This power
MOSFET is usually used at DC-DC, AC-DC converters for
power applications.
FEATURES
* RDS(ON) < 0.5Ω @ VGS=10V, ID=5.5A
* By using Super Junction Structure
* Fast Switching
* With 100% Avalanche Tested
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
11NM60L-TA3-T
11NM60G-TA3-T
11NM60L-TF3-T
11NM60G-TF3-T
11NM60L-TF1-T
11NM60G-TF1-T
11NM60L-TM3-T
11NM60G-TM3-T
11NM60L-TN3-R
11NM60G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
TO-220F1
TO-251
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2017 Unisonic Technologies Co., Ltd
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11NM60-U2
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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11NM60-U2
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
Drain Current
Avalanche Energy
Continuous
Pulsed (Note 2)
Single Pulsed (Note 3)
VGSS
ID
IDM
EAS
±30
11
44
425
V
A
A
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt 18 V/ns
TO-220
156 W
Power Dissipation
TO-220F/TO-220F1
PD
50
W
TO-251/TO-252
60 W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L=132mH, IAS=2.54A, VDD= 50V, RG=25Ω, Starting TJ=25°C
4. ISD ≤11A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
Junction to Ambient
TO-220F1
TO-251/TO-252
TO-220
Junction to Case
TO-220F/TO-220F1
TO-251/TO-252
SYMBOL
θJA
θJC
RATING
62.5
110
0.8
2.5
2.08
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Номер в каталоге | Описание | Производители |
11NM60-U2 | N-CHANNEL POWER MOSFET | Unisonic Technologies |
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