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6NM65-Q PDF даташит

Спецификация 6NM65-Q изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв 6NM65-Q
Описание N-CHANNEL POWER MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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6NM65-Q Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
6NM65-Q
Preliminary
6A, 650V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 6NM65-Q is a Super Junction MOSFET Structure. It
uses UTC advanced planar stripe, DMOS technology to provide
customers perfect switching performance, minimal on-state
resistance.
The UTC 6NM65-Q is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.
FEATURES
* RDS(on) < 1.08 @ VGS=10V, ID=3A
* Improved dv/dt capability
* Fast switching
* 100% avalanche tested
SYMBOL
Power MOSFET
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
6NM65L-TA3-T
6NM65G-TA3-T
6NM65L-TF1-T
6NM65G-TF1-T
6NM65L-TF2-T
6NM65G-TF2-T
6NM65L-TF3-T
6NM65G-TF3-T
6NM65L-TM3-T
6NM65G-TM3-T
6NM65L-TN3-R
6NM65G-TN3-R
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2017 Unisonic Technologies Co., Ltd
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6NM65-Q Даташит, Описание, Даташиты
6NM65-Q
MARKING
Preliminary
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6NM65-Q Даташит, Описание, Даташиты
6NM65-Q
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous
ID
6.0 A
Pulsed (Note 2)
IDM
24
A
Avalanche Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
IAR
EAS
1.6 A
184 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
3.7 V/ns
TO-220
125 W
Power Dissipation
TO-220F/TO-220F1
TO-220F2
PD
40 W
TO-251/TO-252
55 W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
°С
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L=144mH, IAS=1.6A, VDD=50V, RG=25 , Starting TJ = 25°C
4. ISD6.0A, di/dt200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
Junction to Ambient
TO-220F1/TO-220F2
TO-251/TO-252
TO-220
Junction to Case
TO-220F/TO-220F1
TO-220F2
TO-251/TO-252
SYMBOL
θJA
θJC
RATING
62.5
110
1.0
3.13
2.27
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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