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PDF 9NM65 Data sheet ( Hoja de datos )
| Número de pieza | 9NM65 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
9NM65
Preliminary
9.0A, 650V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 9NM65 is a Super Junction MOSFET Structure and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and a high rugged
avalanche characteristics. This power MOSFET is usually used at
DC-DC, AC-DC converters for power applications.
FEATURES
* RDS(ON) < 0.56Ω @ VGS=10V, ID=4.5A
* High switching Speed
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
9NM65L-TA3-T
9NM65G-TA3-T
9NM65L-TF1-T
9NM65G-TF1-T
9NM65L-TF2-T
9NM65G-TF2-T
9NM65L-TF3-T
9NM65G-TF3-T
9NM65L-TM3-T
9NM65G-TM3-T
9NM65L-TN3-R
9NM65G-TN3-R
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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9NM65
Preliminary
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
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5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 9NM65.PDF ] | |
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