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CJ5903DC PDF даташит

Спецификация CJ5903DC изготовлена ​​​​«JCET» и имеет функцию, называемую «Dual P-Channel MOSFET».

Детали детали

Номер произв CJ5903DC
Описание Dual P-Channel MOSFET
Производители JCET
логотип JCET логотип 

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CJ5903DC Даташит, Описание, Даташиты
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB3*2-8L-B Plastic-Encapsulate MOSFETS
CJ5903DC
V(BR)DSS
-20V
Dual P-Channel MOSFET
RDS(on)MAX
70 mΩ@-4.5V
90 mΩ@-2.5V
120 mΩ@-1.8V
 
ID
-4.5A 
DFNWB3*2-8L-B
D1
D2
FEATURE
Surface Mount Package
TrenchFET Power MOSFET
MARKING
APPLICATION
Load Swith,PA Switch and Battery Switch for Portable
Devices and Game Consoles
Equivalent Circuit
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
* Repetitive rating : Pulse width limited by junction temperature.
Symbol
VDS
VGS
ID
IDM *
RθJA
Tj
Tstg
TL
www.cj-elec.com
1
Value
-20
±10
-4.5
-18
113.6
150
-55~+150
260
Unit
V
V
A
A
/W
A-2,May,2015









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CJ5903DC Даташит, Описание, Даташиты
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 unless otherwise specified
Parameter
Symbol
Test Condition
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR) DSS VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS VDS =-16V,VGS = 0V
Gate-body leakage current
IGSS VGS =±10V, VDS = 0V
Gate threshold voltage (note 1)
VGS(th)
VDS =VGS, ID =-250µA
VGS =-4.5V, ID =-4.3A
Drain-source on-resistance (note 1)
RDS(on) VGS =-2.5V, ID =-3.6A
VGS =-1.8V, ID =-1.5A
Forward tranconductance (note 1)
gFS VDS =-6V, ID =-4.6A
Diode forward voltage(note 1)
DYNAMIC PARAMETERS (note 2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate charge
Gate-source charge
Gate-drain charge
SWITCHING PARAMETERS(note 2)
Turn-on delay time
VSD IS=-4.5A, VGS = 0V
Ciss
Coss
Crss
Qg
Qgs
Qgd
VDS =-6V,VGS =0V,f =1MHz
VDS =-6V,VGS =-4.5V,ID =-5.6A
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VGS=-4.5V,VDD=-6V,
Rg=1,RL=1.3,ID-4.5A
Turn-off fall time
tf
Notes :
1. Pulse Test : Pulse width300µs, duty cycle0.5%.
2. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
-20 V
-1 µA
±10 uA
-0.4 -1 V
70 m
90 m
120 m
12 S
-1.2 V
1500
260
250
2.3
2.5
16
pF
pF
pF
nC
nC
nC
35 ns
35 ns
50 ns
25 ns
www.cj-elec.com
2
A-2,May,2015









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CJ5903DC Даташит, Описание, Даташиты
DFNWB3X2-8L-B Package Outline Dimensions
1
1
1 1
DFNWB3X2-8L-B
www.cj-elec.com
3
A-2,May,2015










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Номер в каталогеОписаниеПроизводители
CJ5903DCDual P-Channel MOSFETJCET
JCET

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