CJL2623 PDF даташит
Спецификация CJL2623 изготовлена «JCET» и имеет функцию, называемую «Dual P-Channel MOSFET». |
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Детали детали
Номер произв | CJL2623 |
Описание | Dual P-Channel MOSFET |
Производители | JCET |
логотип |
5 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETs
CJL2623 Dual P-Channel MOSFET
V(BR)DSS
-30 V
RDS(on)MAX
130mΩ@-10V
180mΩ@-4.5V
ID
-3 A
SOT-23-6L
FEATURE
z TrenchFET Power MOSFET
z Low Gate Charge
z Low On-resistance
z Surface Mount Package
MARKING:
6
APPLICATION
z DC/DC converter
z Load switch for portable devices
z Commercial-industrial applications
Equivalent Circuit
1
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current (note 1)
IDM
Power Dissipation (note 2)
PD
Thermal Resistance from Junction to Ambient
RθJA
Junction Temperature
TJ
Storage Temperature
TSTG
Notes : 1. Pulse width limited by Max.junction temperature.
2.Per element must not be exceeded
Value
-30
±20
-3
-20
0.35
357
150
-55~ 150
Unit
V
V
A
A
W
℃/W
℃
℃
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MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
STATIC PARAMETERS
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS VDS =-30V,VGS = 0V
Gate-body leakage current
IGSS VGS =±20V, VDS = 0V
Gate threshold voltage
VGS(th)
VDS =VGS, ID =-250µA
Drain-source on-resistance (note 3)
RDS(on)
VGS =-10V, ID =-3A
VGS =-4.5V, ID =-2A
Forward tranconductance
gFS VDS =-5V, ID =-2A
Diode forward voltage (note 3)
VSD IS=-1A, VGS = 0V
DYNAMIC PARAMETERS(note 4)
Input Capacitance
Ciss
Output Capacitance
Coss VDS =-25V,VGS =0V,f =1MHz
Reverse Transfer Capacitance
Crss
SWITCHING PARAMETERS (note 3,4)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VDD=-15V,VGS=-10V,ID=-1A
RD=15Ω,RG=3.3Ω
Turn-off fall time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS =-24V,VGS =-4.5V,ID=-2A
Gate-Drain Charge
Qgd
Notes : 3. Pulse Test : Pulse width≤300μs, duty cycle≤2%.
4. Graranted by design,not subject to production testing.
Min Typ Max Unit
-30 V
-1 µA
±100 nA
-1 -3 V
130 mΩ
180 mΩ
2S
-1.2 V
240 pF
42 pF
32 pF
5 ns
6 ns
15 ns
3 ns
4.5 nC
0.5 nC
1.4 nC
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Typical Characteristics
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
-0
-0
Output Characteristics
VGS=-6V
VGS=-5V
VGS=-4.5V
VGS=-4V
VGS=-3.5V
VGS=-3V
-1 -2 -3
DRAIN TO SOURCE VOLTAGE VDS (V)
160
150 Ta=25℃
Pulsed
140
130
120
110
100
90
80
70
60
50
40
30
20
-0
-1
R
DS(ON)
——
I
D
VGS=-4.5V
VGS=-10V
-2 -3
DRAIN CURRENT ID (A)
-4
I
S
——
V
SD
-5
-4
-5
-1
Ta=100℃
Pulsed
Ta=25℃
-0.1 Pulsed
-0.01
-0.0
-0.4 -0.8 -1.2
SOURCE TO DRAIN VOLTAGE VSD (V)
-1.6
Transfer Characteristics
-12
VDS=-3.0V
Pulsed
-10
Ta=25℃
Ta=100℃
-8
-6
-4
-2
-0
-0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
GATE TO SOURCE VOLTAGE VGS (V)
R
DS(ON)
——
V
GS
800
700
600
ID=-2A
500
400
300
Ta=100℃
200 Pulsed
Ta=25℃
100 Pulsed
0
-0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
GATE TO SOURCE VOLTAGE VGS (V)
-1.8
-1.7
-1.6
-1.5
-1.4
-1.3
-1.2
25
Threshold Voltage
ID=-250uA
50 75 100
JUNCTION TEMPERATURE TJ (℃)
125
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