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NSVF4009SG4 PDF даташит

Спецификация NSVF4009SG4 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «RF Transistor».

Детали детали

Номер произв NSVF4009SG4
Описание RF Transistor
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NSVF4009SG4 Даташит, Описание, Даташиты
NSVF4009SG4
RF Transistor
for Low Noise Amplifier
This RF transistor is designed for low noise amplifier applications. MCPH
package is suitable for use under high temperature environment because it
has superior heat radiation characteristics. This RF transistor is AEC-Q101
qualified and PPAP capable for automotive applications.
Features
Low-noise use
: NF = 1.1 dB typ. (f = 2 GHz)
High cut-off frequency : fT = 25 GHz typ. (VCE = 3 V)
Low operating voltage
High gain
: |S21e|2 = 17 dB typ. (f = 2 GHz)
AEC-Q101 qualified and PPAP capable
MCPH4 package is pin-compatible with SC-82FL
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
Low Noise Amplifier for Satellite Radio
Low Noise Amplifier for GPS
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Collector to Base Voltage
VCBO
10 V
Collector to Emitter Voltage
VCEO
3.5 V
Emitter to Base Voltage
VEBO
2.5 V
Collector Current
IC 40 mA
Collector Dissipation
PC 120 mW
Operating Junction and
Storage Temperature
Tj, Tstg
55 to +150 C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
www.onsemi.com
3.5 V, 40 mA
fT = 25 GHz typ.
RF Transistor
ELECTRICAL CONNECTION
NPN
1
3
1 : Collector
2 : Emitter
3 : Base
2,4 4 : Emitter
4
3
MARKING
1
2 MCPH4
ORDERING INFORMATION
See detailed ordering and shipping
information on page 14 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
September 2016 - Rev. 0
1
Publication Order Number :
NSVF4009SG4/D









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NSVF4009SG4 Даташит, Описание, Даташиты
NSVF4009SG4
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2)
Parameter
Symbol
Conditions
Value
Unit
min typ max
Collector Cutoff Current
ICBO
VCB = 5 V, IE = 0 A
1.0 A
Emitter Cutoff Current
IEBO
VEB = 1 V, IC = 0 A
1.0 A
DC Current Gain
hFE VCE = 1 V, IC = 5 mA
50 120
Gain-Bandwidth Product
fT VCE = 3 V, IC = 20 mA
20 25
GHz
Reverse Transfer Capacitance
Forward Transfer Gain
Cre
| S21e |21
| S21e |22
VCB = 1 V, f = 1 MHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 3 V, IC = 20 mA, f = 2 GHz
0.15
9 13.5
17
pF
dB
dB
Noise Figure
NF VCE = 1 V, IC = 5 mA, f = 2 GHz
1.1 1.5 dB
1dB Compression Point
PO(1dB)
VCE = 3 V, IC = 20 mA, f = 2 GHz
13.5 dBm
3rd Order Intercept Point
OIP3
VCE = 3 V, IC = 20 mA, f = 2 GHz
23 dBm
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Note 3 : Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
www.onsemi.com
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NSVF4009SG4 Даташит, Описание, Даташиты
NSVF4009SG4
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Номер в каталогеОписаниеПроизводители
NSVF4009SG4RF TransistorON Semiconductor
ON Semiconductor

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