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C4767 PDF даташит

Спецификация C4767 изготовлена ​​​​«Panasonic» и имеет функцию, называемую «NPN Transistor - 2SC4767».

Детали детали

Номер произв C4767
Описание NPN Transistor - 2SC4767
Производители Panasonic
логотип Panasonic логотип 

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C4767 Даташит, Описание, Даташиты
Transistor
2SC4767
Silicon NPN epitaxial planer type
For high-frequency power amplification
s Features
q High transition frequency fT.
q Output of 0.6W is obtained in the VHF band (f=175MHz).
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
36
16
3
0.5
0.3
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
1.27
+0.15
0.45 –0.1
+0.15
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
TO–92NL Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
High-frequency output
Overall efficiency
ICBO
hFE
VCE(sat)
fT
Cob
PO*
η
Conditions
min typ max Unit
VCB = 20V, IE = 0
VCE = 13.5V, IC = 100mA**
10 µA
50
IC = 100mA, IB = 10mA
1V
VCB = 10V, IE = –100mA, f = 200MHz 1.5
2
GHz
VCB = 10V, IE = 0, f = 1MHz
4 8 pF
VCC = 13.5V, Pi = 0.03W, f = 175MHz 0.6
0.9
W
VCC = 13.5V, Pi = 0.03W, f = 175MHz
60
%
*Refer to the PO measurment circuit ** Pulse measurement
1









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C4767 Даташит, Описание, Даташиты
Transistor
The high-frequency output measurement circuit at 175MHz
15pF
2SC4767
Input
50
20pF 30pF
L1
30pF
RFC1
47
30pF
L2
RFC2
15pF
Output
50
1000pF
30pF
0.0025pF
25pF
Circuit constants
L1: φ2mm silver plated copper wire, 0.5T, D = 15
L2: φ1.5mm silver plated copper wire, 2T, D = 15
RFC1: φ1.0mm enameled, 15T, D = 7
RFC2: φ1.5mm silver plated copper wire, 5T, D = 8
PC — Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
160
Ta=25˚C
140
120 IB=4.0mA
3.5mA
100 3.0mA
80 2.5mA
2.0mA
60
1.5mA
40
1.0mA
20 0.5mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
IC — VBE
400
VCE=13.5V
Ta=25˚C
350
300
250
200
150
100
50
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base to emitter voltage VBE (V)
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C4767 Даташит, Описание, Даташиты
Transistor
VCE(sat) — IC
10 IC/IB=5
Ta=25˚C
3
1
0.3
0.1
0.03
0.01
0.003
0.001
0.001 0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1
Cob — VCB
12
IE=0
f=1MHz
Ta=25˚C
10
8
6
4
2
0
1 3 10 30 100
Collector to base voltage VCB (V)
hFE — IC
160
VCE=13.5V
Ta=25˚C
140
120
100
80
60
40
20
0
1 3 10 30 100 300 1000
Collector current IC (mA)
PO — Pi
2.0
VCC=13.5V
f=175MHz
Ta=25˚C
1.6
1.2
0.8
0.4
0
0 40 80 120 160 200
Input power Pi (mW)
2SC4767
fT — IE
4.0
VCB=10V
Ta=25˚C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–1 –3 –10 –30 –100 –300 –1000
Emitter current IE (mA)
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