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даташит H1015 PDF ( Datasheet )

H1015 Datasheet Download - SHANTOU HUASHAN ELECTRONIC DEVICES

Номер произв H1015
Описание PNP SILICON TRANSISTOR
Производители SHANTOU HUASHAN ELECTRONIC DEVICES
логотип SHANTOU HUASHAN ELECTRONIC DEVICES логотип 

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H1015 Даташит, Описание, Даташиты
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H1015
AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC
ABSOLUTE MAXIMUM RATINGSTa=25℃)
TO-92
Tstg——Storage Temperature………………………… -55~150
Tj——Junction Temperature…………………………………150
PC——Collector Dissipation…………………………………400mW
VCBO——Collector-Base Voltage………………………………-50V
VCEO——Collector-Emitter Voltage……………………………-50V
VEBO——Emitter-Base Voltage………………………………-5V
IC——Collector Current……………………………………-150mA
ELECTRICAL CHARACTERISTICSTa=25℃)
1EmitterE
2CollectorC
3BaseB
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
ICBO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
BVCBO
BVCEO
BVEBO
fT
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Current Gain-Bandwidth Product
70
25
-50
-50
-5
80
-100 nA VCB=-50V, IE=0
-100 nA VEB=-5V, IC=0
700 VCE=-6V, IC=-2mA
VCE=-6V, IC=-150mA
-0.3 V IC=-100mA, IB=-10mA
-1.1 V IC=-100mA, IB=-10mA
V IC=-100μA, IE=0
V IC=-1mA, IB=0
V IE=-10μAIC=0
MHz VCE=-10V, IC=-1mA
hFE Classification
O
70—140
Y
120—240
GR
200—400
BL1
350—510
BL2
480—700










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