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PDF HMC1120LP4E Data sheet ( Hoja de datos )

Número de pieza HMC1120LP4E
Descripción RMS POWER DETECTOR & ENVELOPE TRACKER
Fabricantes Hittite 
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v00.0814
Typical Applications
The HMC1120LP4E is ideal for:
Log –> Root-Mean-Square (RMS) Conversion
Tx/Rx Signal Strength Indication (TSSI/RSSI)
RF Power Amplifier Efficiency Control
Receiver Automatic Gain Control
Transmitter Power Control
Envelope Tracking
PA Linearization
Functional Diagram
HMC1120LP4E
RMS POWER DETECTOR &
ENVELOPE TRACKER, DC - 3.9 GHz
Features
Broadband Single-Ended RF Input
RMS Detector with ±1 dB Detection
Accuracy up to 3.9 GHz
Input Dynamic Range: -60 dBm to +8 dBm
±1 dB Envelope Detection Accuracy over
30 dB Input Range
Envelope Detection Bandwidth > 150MHz
Digitally Programmable Integration Bandwidth
Power-Down Mode
24 Lead 4x4mm SMT Package: 16mm²
Envelope Tracking Power-Down Mode
General Description
The HMC1120LP4E is an RMS power detector with
an integrated high bandwidth envelope detector. The
RMS output is a temperature compensated, monoton-
ic, linear-in-dB representation of real RF signal power,
measured over an input sensing range of 70 dB. The
envelope detector provides an accurate voltage output
which is linearly proportional to the amplitude enve-
lope of the RF input signal for modulation bandwidths
up to 150 MHz. The high bandwidth envelope detec-
tion of the HMC1120LP4E makes it ideal for detecting
broadband and high crest factor RF signals commonly
used in GSM, WCDMA, and LTE systems. Addition-
ally, the instantaneous envelope output can be used to
create fast, excessive RF power protection, PA linear-
ization, and efficiency enhancing envelope-tracking
PA implementations.
The HMC1120LP4E’s RMS detector integration band-
width is digitally programmable via input pins SCI1-4
over a range of more than 4 decades. This allows the
user to dynamically set the operation bandwidth and
also permits the detection of different types of modula-
tions on the same platform.
The HMC1120LP4E features an internal op-amp at the
RMS output stage, which accommodates slope and
intercept adjustments and supports a wide range of
applications.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
1
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]

1 page




HMC1120LP4E pdf
v00.0814
HMC1120LP4E
RMS POWER DETECTOR &
ENVELOPE TRACKER, DC - 3.9 GHz
RMSOUT & Error vs. Pin @ 3900 MHz [1] [2]
33
2.5 2
21
1.5 0
1 -1
0.5 -2
0 -3
-70 -60 -50 -40 -30 -20 -10 0 10
INPUT POWER (dBm)
Ideal
RMSOUT +25C
RMSOUT +85C
RMSOUT -40C
ERR +25C
ERR +85C
ERR -40C
RMSOUT Slope vs. Frequency [1] [2]
40
RMSOUT Intercept vs. Frequency [1] [2]
-60
-62
-64
-66
-68
-70
-72
-74
-76
-78
-80
0
1000
2000
3000
FREQUENCY (MHz)
4000
+25C
+85C
-40C
RMSOUT vs. Pin
with LTE 20MHz @ +25 °C [1]
3
38 2.5
2
36
1.5
34
1
32 0.5
30
0
1000
2000
3000
FREQUENCY (MHz)
+25C
+85C
4000
-40C
RMSOUT Error vs. Pin
with LTE 20MHz @ +25 °C [1]
3
0
-70 -60 -50 -40 -30 -20 -10 0 10
INPUT POWER (dBm)
100MHz
900MHz
1900MHz
2200MHz
2700MHz
3500MHz
3900MHz
RMSOUT Error vs. Pin with LTE 20MHz @
+85 °C wrt +25 °C Ideal [1]
3
22
11
00
-1 -1
-2 -2
-3
-70 -60 -50 -40 -30 -20 -10 0 10
INPUT POWER (dBm)
100MHz
900MHz
1900MHz
2200MHz
2700MHz
3500MHz
3900MHz
-3
-70 -60 -50 -40 -30 -20 -10
INPUT POWER (dBm)
0
10
100MHz
900MHz
1900MHz
2200MHz
2700MHz
3500MHz
3900MHz
[1] Data was taken at Sci4=Sci3=Sci2=Sci1=3.3V
[2] LTE 20MHz input waveform
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
5
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]

5 Page





HMC1120LP4E arduino
v00.0814
Absolute Maximum Ratings
Power Supply Voltage (Vcc)
RF Input Power
Input Voltage
Junction Temperature
Thermal Resistance (Rth)
(junction to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
3.8V
13 dBm
VCC + 0.6V
125 °C
23.82 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1B
Outline Drawing
HMC1120LP4E
RMS POWER DETECTOR &
ENVELOPE TRACKER, DC - 3.9 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND
SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY.
3. LEAD AND GROUND PADDLE PLATING: 100% MATTE TIN
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
6. CHARACTERS TO BE HELVETICA MEDIUM, .025 HIGH, WHITE INK, OR LASER MARK
LOCATED APPROX. AS SHOWN.
7. PAD BURR LENGTH SHALL BE 0.15mm MAX. PAD BURR HEIGHT SHALL BE 0.05mm
MAX.
8. PACKAGE WARP SHALL NOT EXCEED 0.05mm
9. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF
GROUND.
10. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN.
Package Information
Part Number
Package Body Material
HMC1120LP4E RoHS-compliant Low Stress Injection Molded Plastic
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
Lead Finish
100% matte Sn
MSL Rating [2]
MSL1
Package Marking [1]
H1120
XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
11
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]

11 Page







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