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PDF HMC460LC5 Data sheet ( Hoja de datos )
| Número de pieza | HMC460LC5 | |
| Descripción | GaAs pHEMT MMIC LOW NOISE AMPLIFIER | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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v05.0217
7
Typical Applications
The HMC460LC5 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
Functional Diagram
HMC460LC5
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
Features
Noise Figure: 2.5 dB @ 10 GHz
Gain: 14 dB @ 10 GHz
P1dB Output Power: +16.5 dBm @ 10 GHz
Supply Voltage: +8V @ 75 mA
50 Ohm Matched Input/Output
32 Lead Ceramic 5 x 5 mm SMT Package: 25 mm2
General Description
The HMC460LC5 is a GaAs MMIC pHEMT Low Noise
Distributed Amplifier in a leadless 5 x 5 mm ceramic
surface mount package which operates from DC to
20 GHz. The amplifier provides 14 dB of gain, 2.5 dB
noise figure and +16.5 dBm of output power at 1 dB
gain compression while requiring only 75 mA from a
Vdd = 8V supply. Gain flatness is excellent from DC
to 20 GHz making the HMC460LC5 ideal for EW,
ECM, Radar and test equipment applications. The
wideband amplifier I/Os are internally matched to
50 Ohms.
7-1
Electrical Specifications, TA = +25 °C, Vdd= 8V, Idd= 75 mA*
Parameter
Min. Typ. Max.
Frequency Range
DC - 6.0
Gain
11 14
Gain Flatness
± 0.5
Gain Variation Over Temperature
0.008
Noise Figure
3.5 5.0
Input Return Loss
17
Output Return Loss
17
Output Power for 1 dB Compression (P1dB)
14
17
Saturated Output Power (Psat)
18
Output Third Order Intercept (IP3)
29.5
Supply Current
(Idd) (Vdd= 8V, Vgg= -0.9V Typ.)
75
*Adjust Vgg between -2 to 0V to achieve Idd= 75 mA typical.
Min.
11
13
Typ.
6.0 - 18.0
14
± 0.15
0.01
2.5
18
15
16
18
29
Max.
4.0
75
Min. Typ. Max.
18.0 - 20.0
10 13
± 0.25
0.01
3.5 5
12
15
12 15
17
28.5
75
Units
GHz
dB
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
1 page  
v05.0217
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg)
Gate Bias Voltage (Igg)
RF Input Power (RFIN)(Vdd = +8 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 23 mW/°C above 85 °C)
Thermal Resistance
(channel to package bottom)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+9 Vdc
-2 to 0 Vdc
2.5 mA
+18 dBm
175 °C
2W
44.4 °C/W
-65 to +150 °C
-55 to +85 °C
Class 1A
Outline Drawing
HMC460LC5
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
Typical Supply Current vs. Vdd
Vdd (V)
+7.5
+8.0
+8.5
Idd (mA)
74
75
76
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
7
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING:
30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PACKAGE WARP SHALL NOT EXCEED 0.05 mm DATUM -C-
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
HMC460LC5
Alumina, White
[1] Max peak reflow temperature of 260 °C
[2] 4-Digit lot number XXXX
Lead Finish
Gold over Nickel
MSL Rating
MSL3 [1]
Package Marking [2]
H460
XXXX
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
7-4
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| PDF Descargar | [ Datasheet HMC460LC5.PDF ] | |
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