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PDF HMC639ST89E Data sheet ( Hoja de datos )
| Número de pieza | HMC639ST89E | |
| Descripción | HIGH IP3 / LOW NOISE AMPLIFIER | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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HMC639ST89 / 639ST89E
v03.0810
HIGH IP3, LOW NOISE
AMPLIFIER, 0.2 - 4.0 GHz
Typical Applications
The HMC639ST89(E) is ideal for:
• Cellular / PCS / 3G
• WiMAX, WiBro, & Fixed Wireless
• CATV & Cable Modem
9 • Microwave Radio
• IF and RF Sections
Functional Diagram
Features
Low Noise Figure: 2.3 dB
High P1dB Output Power: +22 dBm
High Output IP3: +38 dBm
Gain: 13 dB
50 Ohm I/O’s - No External Matching
Industry Standard SOT89 Package
General Description
The HMC639ST89(E) is a GaAs pHEMT, High
Linearity, Low Noise, Wideband Gain Block Amplifier
covering 0.2 to 4.0 GHz. Packaged in an industry
standard SOT89, the amplifier can be used as either
a cascadable 50 Ohm gain stage, a PA Pre-Driver,
a Low Noise Amplifier, or a Gain Block with up to
+22 dBm output power. This versatile Gain Block
Amplifier is powered from a single +5V supply and
requires no external matching components. The
internally matched topology permits this amplifier to
be readily ported between virtually any printed circuit
board material, regardless of its dielectric constant,
thickness, or composition.
Electrical Specifications, Vs= 5V, TA = +25° C
Parameter
Min
Frequency Range
Gain
10
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
19
Output Third Order Intercept (IP3)
35
Noise Figure
Supply Current (Icq)
90
Note: Data taken with broadband bias tee on device output.
Typ.
0.7 - 2.2
13
0.01
12
12
20
21
38
2.3
110
Max
0.02
120
Min.
6
20
35
90
Typ.
0.2 - 4.0
10
0.01
12
14
20
22
38
2.5
110
Max.
0.02
120
Units
GHz
dB
dB/ °C
dB
dB
dBm
dB
dBm
dB
mA
9-1
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1 page  
v03.0810
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)(Vcc = +5 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 13.3 mW/°C above 85 °C)
Thermal Resistance
(Channel to lead)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5 Volts
+15 dBm
150 °C
0.86 W
75.6 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
Outline Drawing
HMC639ST89 / 639ST89E
HIGH IP3, LOW NOISE
AMPLIFIER, 0.2 - 4.0 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
9
NOTES:
1. PACKAGE BODY MATERIAL:
MOLDING COMPOUND MP-180S OR EQUIVALENT.
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.
3. LEAD PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
HMC639ST89
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC639ST89E RoHS-compliant Low Stress Injection Molded Plastic
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
100% matte Sn
MSL Rating
MSL1 [1]
MSL1 [2]
Package Marking [3]
H639
XXXX
H639
XXXX
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9-4
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| PDF Descargar | [ Datasheet HMC639ST89E.PDF ] | |
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