HMC599ST89 PDF даташит
Спецификация HMC599ST89 изготовлена «Analog Devices» и имеет функцию, называемую «GaAs pHEMT MMIC LNA». |
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Детали детали
Номер произв | HMC599ST89 |
Описание | GaAs pHEMT MMIC LNA |
Производители | Analog Devices |
логотип |
9 Pages
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HMC599ST89 / 599ST89E
v02.0311
GaAs pHEMT MMIC LNA, 75 Ohm
50 - 1000 MHz
7 Typical Applications
The HMC599ST89(E) is ideal for:
• VHF / UHF Antennas
• HDTV Receivers
• CMTS Equipment
• CATV, Cable Modem & DBS
Features
High P1dB Output Power: +19 dBm
High Output IP3: +39 dBm
Low Noise Figure: 2.2 dB
Cascadable 75 Ohm I/Os
Single Bias Supply: +3V or +5V
Industry Standard SOT89 Package
Functional Diagram
General Description
The HMC599ST89(E) is a GaAs PHEMT High
Linearity, Low Noise Gain Block MMIC SMT amplifier
covering 50 to 1000 MHz. Packaged in an industry
standard SOT89, the amplifier can be used as a
cascadable 75 Ohm RF or IF gain stage as well
as a PA or LO driver with up to +19 dBm output
power. The HMC599ST89(E) offers 14 dB of gain
with a +39 dBm output IP3 at 250 MHz, and can
operate directly from a +3V or +5V supply. The
HMC599ST89(E) exhibits excellent gain and output
power stability over temperature, while requiring a
minimal number of external bias components.
Electrical Specifications, Vdd = 5V, TA = +25° C
Parameter
Gain
50 - 500 MHz
500 - 1000 MHz
Gain Variation Over Temperature
50 - 1000 MHz
Input Return Loss
50 - 500 MHz
500 - 1000 MHz
Output Return Loss
50 - 500 MHz
500 - 1000 MHz
Reverse Isolation
50 - 1000 MHz
Output Power for 1 dB Compression (P1dB)
50 - 500 MHz
Output Third Order Intercept (IP3)
(Pout= -10 dBm per tone, 1 MHz spacing)
50 - 500 MHz
500 - 1000 MHz
Noise Figure
50 - 1000 MHz
Supply Current (Idd)
Min.
13
12
16
100
Typ.
14.5
14
0.005
15
12
25
15
20
19
39
36
2.2
120
Max.
140
Units
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dBm
dBm
dBm
dB
mA
7-1
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HMC599* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
EVALUATION KITS
• HMC599ST89 Evaluation Board
DOCUMENTATION
Application Notes
• AN-1363: Meeting Biasing Requirements of Externally
Biased RF/Microwave Amplifiers with Active Bias
Controllers
• Broadband Biasing of Amplifiers General Application Note
• MMIC Amplifier Biasing Procedure Application Note
• Thermal Management for Surface Mount Components
General Application Note
Data Sheet
• HMC599 Data Sheet
REFERENCE MATERIALS
Quality Documentation
• Package/Assembly Qualification Test Report: 3 Lead
Plastic SOT89 Package (QTR: 10002 REV: 02)
• Semiconductor Qualification Test Report: PHEMT-G (QTR:
2013-00273)
DESIGN RESOURCES
• HMC599 Material Declaration
• PCN-PDN Information
• Quality And Reliability
• Symbols and Footprints
DISCUSSIONS
View all HMC599 EngineerZone Discussions.
SAMPLE AND BUY
Visit the product page to see pricing options.
TECHNICAL SUPPORT
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number.
DOCUMENT FEEDBACK
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v02.0311
Broadband Gain & Return Loss @ 3V
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
0
S21
S11
S22
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FREQUENCY (GHz)
1
Gain vs. Temperature @ 3V
17
16
15
14
13
12
11 +25C
+85C
10 -40C
9
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FREQUENCY (GHz)
1
Input Return Loss vs. Temperature @ 3V
0
-5
-10
-15
-20
+25C
+85C
-40C
-25
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FREQUENCY (GHz)
1
HMC599ST89 / 599ST89E
GaAs pHEMT MMIC LNA, 75 Ohm
50 - 1000 MHz
Broadband Gain & Return Loss @ 5V
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
0
S21
S11
S22
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FREQUENCY (GHz)
1
Gain vs. Temperature @ 5V
17
16
15
14
13
12
11 +25C
+85C
10 -40C
9
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FREQUENCY (GHz)
1
Input Return Loss vs. Temperature @ 5V
0
-5
-10
-15
-20
+25C
+85C
-40C
-25
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FREQUENCY (GHz)
1
7
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7-2
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Номер в каталоге | Описание | Производители |
HMC599ST89 | GaAs pHEMT MMIC LNA | Analog Devices |
HMC599ST89E | GaAs pHEMT MMIC LNA | Analog Devices |
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