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PDF HMC-AUH312 Data sheet ( Hoja de datos )
| Número de pieza | HMC-AUH312 | |
| Descripción | Low Noise Wideband Amplifier | |
| Fabricantes | Analog Devices | |
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Data Sheet
0.5 GHz to 80 GHz, GaAs, HEMT, MMIC,
Low Noise Wideband Amplifier
HMC-AUH312
FEATURES
Small signal gain: >8 dB
80 GHz distributed amplifier
Configurable with or without bias tees for VDD and VGG1 bias
Low power dissipation
300 mW with bias tee at VDD = 5 V
360 mW without bias tee at VDD = 6 V
480 mW without bias tee at VDD = 8 V
Die size: 1.2 mm × 1.0 mm × 0.1 mm
APPLICATIONS
Fiber optic modulator drivers
Fiber optic photoreceiver postamplifiers
Low noise amplifier for test and measurement equipment
Point to point and point to multipoint radios
Wideband communication and surveillance systems
Radar warning receivers
GENERAL DESCRIPTION
The HMC-AUH312 is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), HEMT, low noise,
wideband amplifier die that operates between 500 MHz and
80 GHz, providing a typical 3 dB bandwidth of 80 GHz. The
amplifier provides 10 dB of small signal gain and a maximum
output amplitude of 2.5 V p-p, which makes it ideal for use in
broadband wireless, fiber optic communications, and test
equipment applications.
FUNCTIONAL BLOCK DIAGRAM
1 RFIN/VGG1
2
VGG1
HMC-AUH312
VDD
5
RFOUT/
VDD
3
VGG2
4
Figure 1.
The amplifier die occupies 1.2 mm × 1.0 mm, facilitating easy
integration into a multichip module (MCM). The HMC-AUH312
can be used with or without a bias tee, and requires off-chip
blocking components and bypass capacitors for the dc supply
lines. Adjustable gate voltages allow for gain adjustment.
Rev. E
Document Feedback
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responsibilityisassumedbyAnalogDevices for itsuse,nor foranyinfringementsofpatentsor other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2015 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
1 page  
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter
Drain Bias Voltage with Bias Tee (VDD)
Drain Bias Voltage Without Bias Tee (VDD)
Gain Bias Voltage (VGG1)
Gain Bias Voltage (VGG2)
RF Input Power
Channel Temperature
Storage Temperature Range
Operating Temperature Range
Rating
7 V dc
8.25 V dc
0.5 V
2V
10 dBm
180°C
−40°C to +85°C
−55°C to +85°C
HMC-AUH312
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
Rev. E | Page 5 of 17
5 Page 
Data Sheet
THEORY OF OPERATION
HMC-AUH312 is a GaAs MMIC HEMT cascode distributed,
low noise, wideband amplifier. The cascode distributed
amplifier uses a fundamental cell of two field effect transistors
(FETs) in series, source to drain. This fundamental cell then
duplicates a number of times.
The major benefit of this architecture is an increase in the
operation bandwidth. The basic schematic for a fundamental
cell is shown in Figure 21, which shows the RFIN and RFOUT
functions of the RFIN/VGG1 and RFOUT/VDD pins.
HMC-AUH312
VGG2
VDD
RFOUT
RFIN
VGG1
Figure 21. Fundamental Cell Schematic
To obtain the best performance from the HMC-AUH312 and
not damage the device, follow the recommended biasing
sequence outlined in the Device Operation section.
Rev. E | Page 11 of 17
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet HMC-AUH312.PDF ] | |
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