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HMC-ALH482 PDF даташит

Спецификация HMC-ALH482 изготовлена ​​​​«Analog Devices» и имеет функцию, называемую «GaAs HEMT MMIC LOW NOISE AMPLIFIER».

Детали детали

Номер произв HMC-ALH482
Описание GaAs HEMT MMIC LOW NOISE AMPLIFIER
Производители Analog Devices
логотип Analog Devices логотип 

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HMC-ALH482 Даташит, Описание, Даташиты
v04.1009
1
Typical Applications
This HMC-ALH482 is ideal for:
• Wideband Communication Systems
• Surveillance Systems
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
Functional Diagram
HMC-ALH482
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 2 - 22 GHz
Features
Noise Figure: 1.7 dB @ 2-12 GHz
Noise Figure: 2.2 dB @ 12-22 GHz
Gain: 16 dB @ 12 GHz
P1dB Output Power: +14 dBm
Supply Voltage: +4V @ 45 mA
Die Size: 2.04 x 1.2 x 0.1 mm
General Description
The HMC-ALH482 is a GaAs MMIC HEMT Low Noise
Wideband Amplifier die which operates between 2
and 22 GHz. The amplifier provides 16 dB of gain, 1.7
dB noise figure up to 12 GHz and +14 dBm of output
power at 1 dB gain compression while requiring only
45 mA from a +4V supply voltage. The HMC-ALH482
amplifier is ideal for integration into Multi-Chip-
Modules (MCMs) due to its small size.
Electrical Specifications*, TA = +25° C, Vdd= +4V
Parameter
Min.
Typ.
Frequency Range
2 - 12
Gain
15 16
Gain Variation over Temperature
0.01
Noise Figure
1.7
Input Return Loss
8
Output Return Loss
10
Output Power for 1 dB Compression
14
Supply Current (Idd) (Vdd = 4V, Vgg = -0.2V Typ.)
45
*Unless otherwise indicated, all measurements are from probed die
Max.
2.5
Min.
15
Typ.
12 - 22
16
0.01
2.2
6
5
14
45
Max.
3
Units
GHz
dB
dB / °C
dB
dB
dB
dBm
mA
1 - 204
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HMC-ALH482 Даташит, Описание, Даташиты
v04.1009
Linear Gain vs. Frequency
20
18
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22 24
FREQUENCY (GHz)
Input Return Loss vs. Frequency
0
-2
-4
-6
-8
-10
-12
-14
-16
0 2 4 6 8 10 12 14 16 18 20 22 24
FREQUENCY (GHz)
HMC-ALH482
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 2 - 22 GHz
Noise Figure vs. Frequency
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 12 14 16 18 20 22 24
FREQUENCY (GHz)
1
Output Return Loss vs. Frequency
0
-5
-10
-15
-20
-25
0 2 4 6 8 10 12 14 16 18 20 22 24
FREQUENCY (GHz)
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1 - 205









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HMC-ALH482 Даташит, Описание, Даташиты
v04.1009
1
Absolute Maximum Ratings
Drain Bias Voltage
Drain Bias Current
RF Input Power
Gate Bias Voltage
Channel Temperature
Continuous Pdiss (T = 85 °C)
derate 4.7 mW/ °C above 85 °C
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+5 Vdc
60 mA
5 dBm
-1 to 0.3 Vdc
180 °C
0.45 W
213.3 °C/W
-65 to +150 °C
-55 to +85 °C
Outline Drawing
HMC-ALH482
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 2 - 22 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
1 - 206
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
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