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PDF HMC-ALH435 Data sheet ( Hoja de datos )
| Número de pieza | HMC-ALH435 | |
| Descripción | GaAs HEMT MMIC LOW NOISE AMPLIFIER | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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v03.1009
1
Typical Applications
This HMC-ALH435 is ideal for:
• Wideband Communication Systems
• Surveillance Systems
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
• VSAT
Functional Diagram
HMC-ALH435
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 5 - 20 GHz
Features
Noise Figure: 2.2 dB @ 12 GHz
Gain: 13 dB @ 14 GHz
P1dB Output Power: +16 dBm @ 12 GHz
Supply Voltage: +5V @ 30 mA
Die Size: 1.48 x 0.9 x 0.1 mm
General Description
The HMC-ALH435 is a GaAs MMIC HEMT Low Noise
Wideband Amplifier die which operates between 5
and 20 GHz. The amplifier provides 13 dB of gain,
2.2 dB noise figure at 12 GHz and +16 dBm of output
power at 1 dB gain compression while requiring only
30 mA from a +5V supply voltage. The HMC-ALH435
amplifier is ideal for integration into Multi-Chip-
Modules (MCMs) due to its small size.
Electrical Specifications, TA = +25° C, Vdd= +5V
Parameter
Min.
Frequency Range
Gain
10
Gain Variation over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output IP3
Output Power for 1 dB Compression
Supply Current (Idd)
(Vdd = 5V, Vgg1 = -0.5V Typ., Vgg2 = 1.5V Typ)
*Unless otherwise indicated, all measurements are from probed die
Typ.
5 - 20
13
0.02
2.2
5
10
25
16
30
Max.
2.6
Units
GHz
dB
dB / °C
dB
dB
dB
dBm
dBm
mA
1 - 180
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1 page  
1 Assembly Diagram
v03.1009
HMC-ALH435
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 5 - 20 GHz
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier.
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output.
1 - 184
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC-ALH435.PDF ] | |
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