HMC-ALH310 PDF даташит
Спецификация HMC-ALH310 изготовлена «Analog Devices» и имеет функцию, называемую «GaAs HEMT MMIC LOW NOISE AMPLIFIER». |
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Детали детали
Номер произв | HMC-ALH310 |
Описание | GaAs HEMT MMIC LOW NOISE AMPLIFIER |
Производители | Analog Devices |
логотип |
6 Pages
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v02.0209
1
Typical Applications
This HMC-ALH310 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
Functional Diagram
HMC-ALH310
GaAs HEMT LOW NOISE
AMPLIFIER, 37 - 42 GHz
Features
Noise Figure: 3.5 dB
P1dB: +12 dBm
Gain: 22 dB
Supply Voltage: +2.5V
50 Ohm Matched Input/Output
Die Size: 1.80 x 0.73 x 0.1 mm
General Description
The HMC-ALH310 is a three stage GaAs HEMT MMIC
Low Noise Amplifier (LNA) which operates between
37 and 42 GHz. The HMC-ALH310 features 22 dB of
small signal gain, 3.5 dB of noise figure and an output
power of +12 dBm at 1dB compression from a +2.5V
supply voltage. All bond pads and the die backside
are Ti/Au metallized and the amplifier device is fully
passivated for reliable operation. This versatile LNA
is compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wirebonding, making it ideal for MCM and hybrid
microcircuit applications. All data shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes.
Electrical Specifications, TA = +25° C, Vdd = 2.5V, Idd = 52 mA*
Parameter
Min. Typ.
Frequency Range
37 - 42
Gain
20 22
Noise Figure
3.5
Input Return Loss
4
Output Return Loss
8
Output Power for 1 dB Compression (P1dB)
12
Supply Current (Idd)(Vdd= 2.5V,Vgg= -0.3V Typ.)
52
*Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) to achieve Iddtotal = 52 mA
Max.
4.5
Units
GHz
dB
dB
dB
dB
dBm
mA
1 - 138
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v02.0209
Linear Gain vs. Frequency
26
24
22
20
18
16
14
12
10
35 36 37 38 39 40 41 42 43 44
FREQUENCY (GHz)
Input Return Loss vs. Frequency
0
-5
-10
-15
-20
-25
-30
35 36 37 38 39 40 41 42 43 44
FREQUENCY (GHz)
HMC-ALH310
GaAs HEMT LOW NOISE
AMPLIFIER, 37 - 42 GHz
Noise Figure vs. Frequency
5
4
3
2
1
0
35 36 37 38 39 40 41 42 43 44
FREQUENCY (GHz)
1
Output Return Loss vs. Frequency
0
-5
-10
-15
-20
-25
-30
35 36 37 38 39 40 41 42 43 44
FREQUENCY (GHz)
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1 - 139
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v02.0209
1
Absolute Maximum Ratings
Drain Bias Voltage
Gate Bias Voltage
RF Input Power
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+5 Vdc
-1 to +0.3 Vdc
-5 dBm
137.8 °C/W
-65 to +150 °C
-55 to +85 °C
HMC-ALH310
GaAs HEMT LOW NOISE
AMPLIFIER, 37 - 42 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
Standard
Alternate
GP-5 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
1 - 140
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