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PDF HMC8402 Data sheet ( Hoja de datos )
| Número de pieza | HMC8402 | |
| Descripción | Low Noise Amplifier | |
| Fabricantes | Analog Devices | |
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Data Sheet
2 GHz to 30 GHz, GaAs, pHEMT, MMIC,
Low Noise Amplifier
HMC8402
FEATURES
Output power for 1 dB compression (P1dB): 21.5 dBm typical
Saturated output power (PSAT): 22 dBm typical
Gain: 13.5 dB typical
Noise figure: 2 dB
Output third-order intercept (IP3): 26 dBm typical
Supply voltage: 7 V at 68 mA
50 Ω matched input/output
Die size: 2.7 mm × 1.35 mm × 0.05 mm
APPLICATIONS
Test instrumentation
Microwave radios and very small aperture terminals (VSATs)
Military and space
Telecommunications infrastructure
Fiber optics
GENERAL DESCRIPTION
The HMC8402 is a gallium arsenide (GaAs), pseudomorphic
high electron mobility transistor (pHEMT), monolithic microwave
integrated circuit (MMIC), low noise amplifier which operates
between 2 GHz and 30 GHz. The amplifier provides 13.5 dB of
gain, 2 dB noise figure, 26 dBm output IP3, and 21.5 dBm of
output power at 1 dB gain compression while requiring 68 mA
from a 7 V supply. The HMC8402 is self biased with only a single
positive supply needed to achieve a drain current IDQ of 68 mA.
The HMC8402 amplifier input/outputs are internally matched to
50 Ω facilitating integration into multichip modules (MCMs). All
data is taken with the chip connected via two 0.025 mm (1 mil)
wire bonds of minimal length 0.31 mm (12 mils).
3
2 VGG2
1
RFIN
FUNCTIONAL BLOCK DIAGRAM
HMC8402
RFOUT 4
Figure 1.
Rev. A
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rights of third parties that may result from its use. Specifications subject to change without notice. No
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Tel: 781.329.4700
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Technical Support
www.analog.com
1 page  
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Drain Bias Voltage (VDD)
Gate Bias Voltage (VGG2)
RF Input Power (RFIN)
Channel Temperature
Continuous Power Dissipation (PDISS),
TA = 85°C (Derate 17.2 mW/°C Above 85°C)
Thermal Resistance, θJC (Channel to
Bottom Die)
Storage Temperature Range
Operating Temperature Range
ESD Sensitivity, Human Body Model (HBM)
Rating
10 V
−2.6 V to +3.6 V
20 dBm
175°C
1.55 W
58°C/W
−65°C to +150°C
−55°C to +85°C
Class 1A (250 V)
HMC8402
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
Rev. A | Page 5 of 15
5 Page 
Data Sheet
30
25
20
15
10
–2.4V
–1.4V
0V
5
–2.0V
–1.2V
+1.0V
–1.8V
–1.0V
+2.0V
–1.6V
–0.6V
+2.6V
0
2 6 10 14 18 22 26 30
FREQUENCY (GHz)
Figure 32. Output IP3 vs. Frequency at Various VGG2 Voltages
26
24
22
20
18
16
14
12
10
2.6 2.2 1.8 1.4 1.0 0.6 0.2 –0.2 –0.6 –1.0 –1.4 –1.8 –2.2 –2.6
VGG2 (V)
Figure 33. Output IP3 vs. VGG2 at 16 GHz
HMC8402
30
–1.8V
–0.4V
+0.8V
–1.4V
–0.2V
+1.4V
–1.0V
0V
+2.0V
25
–0.6V
+0.4V
+2.6V
20
15
10
5
0
2 6 10 14 18 22 26
FREQUENCY (GHz)
Figure 34. P1dB vs. Frequency at Various VGG2 Voltages
30
30
–1.8V
–0.4V
+0.8V
–1.4V
–0.2V
+1.4V
–1.0V
0V
+2.0V
25
–0.6V
+0.4V
+2.6V
20
15
10
5
0
2 6 10 14 18 22 26
FREQUENCY (GHz)
Figure 35. PSAT vs Frequency at Various VGG2 Voltages
30
Rev. A | Page 11 of 15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet HMC8402.PDF ] | |
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