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PDF HMC1040LP3CE Data sheet ( Hoja de datos )
| Número de pieza | HMC1040LP3CE | |
| Descripción | GaAs pHEMT MMIC LOW NOISE AMPLIFIER | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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v00.0112
Typical Applications
This HMC1040LP3BE is ideal for:
• Point-to-Point Radios
• Test Instrumentation
• SatCom Transponders & VSAT
• Industrial Sensors
• EW & ECM Subsystems
Functional Diagram
HMC1040LP3CE
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 24 - 43.5 GHz
Features
Low Noise Figure: 2.2 dB
High Gain: 23 dB
P1dB Output Power: +12 dBm
Single Supply: +2.5V @ 70 mA
Output IP3: +22 dBm
50 Ohm Matched Input/Output
16 Lead 3x3 mm SMT Package: 16mm²
General Description
The HMC1040LP3CE is a self-biased GaAs MMIC
Low Noise Amplifier housed in a leadless 3x3 mm
plastic surface mount package. The amplifier operates
between 24 and 43.5 GHz, delivering 23 dB of small
signal gain, 2.2 dB noise figure, and output IP3 of +22
dBm, while requiring only 70 mA from a +2.5 V supply.
The P1dB output power of +12 dBm enables the LNA to
function as a LO driver for many of Hittite’s balanced, I/Q
and image reject mixers. The HMC1040LP3CE fe-
atures I/Os that are DC blocked and internally mat-
ched to 50 Ohms, and is ideal for high capacity
microwave radios and VSAT applications.
Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = Vdd3 = +2.5V, Idd = 70 mA
Parameter
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Frequency Range
24 - 27.5
27.5 - 33.5
33.5 - 43.5
Gain [1]
22 25
20 23
17 20
Gain Variation over Temperature
0.022
0.021
0.021
Noise Figure [1]
2.7 3.2
2.2 2.7
2.7 3.2
Input Return Loss
11 12
10
Output Return Loss
16 13
10
Output Power for 1 dB Compression
12
12
12
Saturated Output Power (Psat)
14
14
14
Output Third Order Intercept (IP3)
22
22
24
Supply Current (Idd)
(Vdd = 2.5V)
70 85
70 85
70 85
[1] Board loss subtracted out.
Units
GHz
dB
dB /°C
dB
dB
dB
dBm
dBm
dBm
mA
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1 page  
v00.0112
Current vs. Input Power @ 33 GHz
80
78 Idd
76
74
72
70
68
66
-15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2
INPUT POWER (dBm)
Outline Drawing
HMC1040LP3CE
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 24 - 43.5 GHz
Absolute Maximum Ratings
Drain Bias Voltage
RF Input Power
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 5.46 mW/°C above 85 °C)
Thermal Resistance
(Channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+4V
+5 dBm
175 °C
0.49 W
183 °C/W
-65 to +150 °C
-40 to +85 °C
Class 0, 100 V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Package Information
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY.
3. LEAD AND GROUND PADDLE PLATING: 100% MATTE TIN
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
6. PAD BURR LENGTH SHALL BE 0.15mm MAX. PAD BURR HEIGHT SHALL
BE 0.05mm MAX.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND
PATTERN.
Part Number
Package Body Material
HMC1040LP3CE RoHS-compliant Low Stress Injection Molded Plastic
[1] Max peak reflow temperature of 260 °C
[2] 4-Digit lot number XXXX
Lead Finish
100% matte Sn
MSL Rating
MSL1 [1]
Package Marking [2]
H1040
XXXX
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4
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HMC1040LP3CE.PDF ] | |
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