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PDF HMC930 Data sheet ( Hoja de datos )
| Número de pieza | HMC930 | |
| Descripción | GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HMC930 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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Typical Applications
The HMC930 is ideal for:
• Test Instrumentation
3 • Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics
Functional Diagram
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Features
High P1dB Output Power: 22 dBm
High Psat Output Power: 24 dBm
High Gain: 13 dB
High Output IP3: 33.5 dBm
Supply Voltage: +10 V @ 175 mA
50 Ohm Matched Input/Output
Die Size: 2.82 x 1.50 x 0.1 mm
General Description
The HMC930 is a GaAs MMIC pHEMT Distrib-
uted Power Amplifier which operates between DC
and 40 GHz. The amplifier provides 13 dB of gain,
33.5 dBm output IP3 and +22 dBm of output power at
1 dB gain compression while requiring 175 mA from
a +10 V supply. The HMC930 exhibits a slightly
positive gain slope from 8 to 32 GHz, making it
ideal for EW, ECM, Radar and test equipment
applications. The HMC930 amplifier I/Os are inter-
nally matched to 50 Ohms facilitating integra-
tion into Mutli-Chip-Modules (MCMs). All data is
taken with the chip connected via two 0.025 mm
(1 mil) wire bonds of minimal length 0.31 mm (12 mils).
3-1
Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg = +3.5 V, Idd = 175 mA*
Parameter
Min. Typ. Max.
Frequency Range
DC - 12
Gain
11.5 13.5
Gain Flatness
±0.5
Gain Variation Over Temperature
0.01
Input Return Loss
18
Output Return Loss
28
Output Power for 1 dB Compression (P1dB)
21
23
Saturated Output Power (Psat)
25
Output Third Order Intercept (IP3)
36
Noise Figure
4.5
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
175
* Adjust Vgg1 between -2 to 0 V to achieve Idd = 175 mA typical.
Min. Typ. Max.
12 - 32
11 13
±0.3
0.017
16
20
20 22
24
33.5
5
175
Min.
10
18
Typ.
32 - 40
12
±1.0
0.032
15
20
20
23
29
7.5
175
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
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3A3p4p3licaotironaSpupppso@rth: Pithtiotene.c: 1o-m800-ANALOG-D
1 page  
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
3
Reverse Isolation vs. Temperature
0
-10 +25C
+85C
-20 -55C
-30
-40
-50
-60
-70
-80
0 4 8 12 16 20 24 28 32 36 40 44
FREQUENCY (GHz)
Power Compression @ 20 GHz
32
28 Pout
Gain
24 PAE
20
16
12
8
4
0
0 3 6 9 12
INPUT POWER (dBm)
15
Gain & Power vs. Supply Current @ 20 GHz
35
30
Gain
P1dB
Psat
25
20
15
10
125 135 145 155 165 175
Idd (mA)
Gain & Power vs. Supply Voltage @ 20 GHz
35
Gain
30
P1dB
Psat
25
20
15
10
8
9 10
Vdd (V)
11
Power Dissipation
3
2
4 GHz
1 10 GHz
20 GHz
30 GHz
40 GHz
0
0 3 6 9 12 15
INPUT POWER (dBm)
3-5
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rliicgehntsseofisthgirrdanptaerdtiebsythimatpmlicaayPtiorehnsouolrtnofretohm:er9wits7isue8seu-.n2dS5epre0ca-infi3ycap3tiao4tne3sntsourbjpeFactteatnoxt cr:higa9hnt7gse8owf-Ai2thn5oaulo0tgn-oD3tiec3vei7.ceN3so.
Trademarks and registered trademarks areAthpepprloipceartytioof tnheSir ruesppepctoivreto:wPnehrso. ne: 978-250-
rpFOPOohonrorerdnapTeertei:iccro7eh8nO,n1,odn-32leo-2l0lgii9vnye-Ae4rWyl7p,aa0yha0t,naw•Pd.OROwtor.odwBaep.orldhaxoc,int9eCtl1iin0tohee6red.,acelNtmorwosms:rwwfAowonro.aaddlno,,agMMloADgAe.0cv20oic0m1e68s22,-94In10c.6,
3A3p4p3licaotironaSpupppso@rth: Pithtiotene.c: 1o-m800-ANALOG-D
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HMC930.PDF ] | |
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